Exploring the potential of c-plane indium gallium nitride quantum dots for twin-photon emission

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dc.check.date2020-11-25
dc.check.infoAccess to this article is restricted until 18 months after publication by request of the publisher.en
dc.contributor.authorPatra, Saroj K.
dc.contributor.authorSchulz, Stefan
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2020-01-16T10:09:00Z
dc.date.available2020-01-16T10:09:00Z
dc.date.issued2019-11-25
dc.date.updated2020-01-16T09:42:12Z
dc.description.abstractNonclassical light emission, such as entangled and single-photon emission, has attracted significant interest because of its importance in future quantum technology applications. In this work, we study the potential of wurtzite (In,Ga)N/GaN quantum dots for novel nonclassical light emission, namely, twin-photon emission. Our calculations, based on a fully atomistic many-body framework, reveal that the combination of carrier localization due to random alloy fluctuations in the dot, spinâ orbit coupling effects, underlying wurtzite crystal structure, and built-in electric fields leads to an excitonic fine structure that is very different from that of more â conventionalâ zinc-blende (In,Ga)As dots, which have been used so far for twin photon emission. We show and discuss here that the four energetically lowest exciton states are all bright and emit linearly polarized light. Furthermore, three of these excitonic states are basically degenerate. All of these results are independent of the alloy microstructure. Also, our calculations reveal large exciton binding energies (>35 meV), which exceed the thermal energy at room temperature. Therefore, (In,Ga)N/GaN dots are very promising candidates for achieving efficient twin photon emission, potentially at high temperatures and over a wide emission wavelength range.en
dc.description.sponsorshipScience Foundation Ireland (17/CDA/4789)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPatra, S. K. and Schulz, S. (2020) 'Exploring the potential of c-plane indium gallium nitride quantum dots for twin-photon emission', Nano Letters, 20(1), pp. 234-241. doi: 10.1021/acs.nanolett.9b03740en
dc.identifier.doi10.1021/acs.nanolett.9b03740en
dc.identifier.eissn1530-6992
dc.identifier.endpage241en
dc.identifier.issn1530-6984
dc.identifier.issued1en
dc.identifier.journaltitleNano Lettersen
dc.identifier.startpage234en
dc.identifier.urihttps://hdl.handle.net/10468/9521
dc.identifier.volume20en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.relation.urihttps://doi.org/10.1021/acs.nanolett.9b03740
dc.rights© 2019, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, © American Chemical Society, after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.9b03740en
dc.subjectExcitonic fine structureen
dc.subjectQuantum dotsen
dc.subjectTwin-photon emissionen
dc.subjectInGaNen
dc.titleExploring the potential of c-plane indium gallium nitride quantum dots for twin-photon emissionen
dc.typeArticle (peer-reviewed)en
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