Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09

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dc.check.date2022-08-26
dc.check.infoAccess to this article is restricted until 24 months after publication by request of the publisher.en
dc.contributor.authorGalluccio, Emmanuele
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorHarvey, Alan
dc.contributor.authorConroy, Michele
dc.contributor.authorNapolitani, Enrico
dc.contributor.authorDuffy, Ray
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderUniversità degli Studi di Padovaen
dc.date.accessioned2021-07-21T07:35:46Z
dc.date.available2021-07-21T07:35:46Z
dc.date.issued2020-08-26
dc.date.updated2021-07-21T07:25:10Z
dc.description.abstractPulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resistance stanogermanide contacts on Ge0.91Sn0.09 substrates. Three different metals (Ni, Pt, and Ti) were characterized using a wide laser energy density range (100-500 mJ/cm(2)). Electrical performance, surface quality, cross-sectional crystallographic, and elemental analysis have been systematically examined in order to identify the ideal process window. Electrical characterization showed that the samples processed by LTA had lower resistance variability compared with the rapid thermal anneal (RTA) counterpart. Among the three metals used, Ni and Pt were the most promising candidates for future sub-nm applications based on the low resistance values. The stanogermanide alloys suffered a high degeneration as the LTA thermal budget increased. Cross-sectional elemental analysis showed a highly unusual Sn segregation effect, particularly for high LTA energy densities, where vertical columns of Sn-rich alloy were formed, also known as cell formation, similar to that seen for Sb hyperdoping of Si when using LTA. This effect is linked to solid solubility and distribution coefficient of Sn in Ge, as well as the velocity of the liquid-solid interface during crystallization as the samples cool.en
dc.description.sponsorshipUniversità degli Studi di Padova (Grant UNIPD-ISR 2017 ‘SENSITISE’)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid105399en
dc.identifier.citationGalluccio, E., Mirabelli; G., Harvey, A., Conroy, M., Napolitani, E. and Duffy, R. (2020) 'Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09', Materials Science in Semiconductor Processing, 121, 105399 (5pp). doi: 10.1016/j.mssp.2020.105399en
dc.identifier.doi10.1016/j.mssp.2020.105399en
dc.identifier.endpage5en
dc.identifier.issn1369-8001
dc.identifier.journaltitleMaterials Science in Semiconductor Processingen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/11581
dc.identifier.volume121en
dc.language.isoenen
dc.publisherElsevier Ltd.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.rights© 2020, Elsevier Ltd. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectGe(1-x)Sn(x)en
dc.subjectLaser thermal annealingen
dc.subjectLiquid-solid reactionsen
dc.subjectStanogermanidesen
dc.subjectResistanceen
dc.subjectSolid solubilityen
dc.subjectGermaniumen
dc.subjectSilicidesen
dc.subjectContactsen
dc.titleCell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09en
dc.typeArticle (peer-reviewed)en
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