Atomic and molecular layer deposition of Nd- and Eu-based oxide and hybrid thin films: Computationally guided precursor selection

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dc.contributor.authorPreischel, Florian
dc.contributor.authorGhazy, Amr
dc.contributor.authorSeren, Merve
dc.contributor.authorObenluneschloss, Jorit
dc.contributor.authorMullins, Rita
dc.contributor.authorRogalla, Detlef
dc.contributor.authorGemming, Thomas
dc.contributor.authorNolan, Michael
dc.contributor.authorDebus, Jorg
dc.contributor.authorKarppinen, Maarit
dc.contributor.authorDevi, Anjana
dc.contributor.funderGerman Research Foundation
dc.date.accessioned2026-07-07T14:00:01Z
dc.date.available2026-07-07T14:00:01Z
dc.date.issued2026-05-12
dc.description.abstractThe exploration of Nd and Eu precursors bearing the (form-)amidinate ligand for atomic layer deposition (ALD) with water resulted in crystalline Nd2O3 and Eu2O3 thin films on Si substrates at low temperatures. Eu2O3 films exhibit strong photoluminescence with well-defined 5D0 → 7Fj transitions that evolve from surface-dominated to bulk-like emission as thickness increases, approaching the optical quality of single crystals. In contrast, Nd2O3 shows temperature-dependent visible emission from defect states rather than f–f transitions, while controlled nitrogen incorporation at 350 °C induces room-temperature luminescence through defect engineering. Leveraging the high reactivity of the Nd and Eu precursors, which was predicted and confirmed by density functional theory (DFT) studies, atomic and molecular layer deposition (ALD/MLD) experiments using −OH and −NH2 containing organic coreactants were performed. Using terephthalic acid (TPA) as a coreactant resulted in high growth per cycle (GPC) values (3.1 Å for Nd-TPA and 3.3 Å for Eu-TPA). Additionally, adenine, guanine, and melamine were successfully introduced as organic linkers, along with rare-earth (RE) precursors. Besides reporting promising water-assisted ALD processes for Nd2O3 and Eu2O3 thin films, this study broadens the range of RE-organic materials available and highlights the importance of designing targeted precursors.en
dc.description.sponsorshipGerman Research Foundation|258179787
dc.description.versionPublished Version
dc.format.extent15
dc.format.mimetypeapplication/pdfen
dc.identifier.authororcidPreischel, Florian
dc.identifier.authororcidGhazy, Amr
dc.identifier.authororcidSeren, Merve
dc.identifier.authororcidObenluneschloss, Jorit
dc.identifier.authororcidMullins, Rita
dc.identifier.authororcidRogalla, Detlef
dc.identifier.authororcidGemming, Thomas
dc.identifier.authororcidNolan, Michael§0000-0002-5224-8580
dc.identifier.authororcidDebus, Jorg
dc.identifier.authororcidKarppinen, Maarit
dc.identifier.authororcidDevi, Anjana
dc.identifier.citationPreischel, F, Ghazy, A, Seren, M, Obenluneschloss, J, Mullins, R, Rogalla, D, Gemming, T, Nolan, M, Debus, J, Karppinen, M & Devi, A 2026, 'Atomic and molecular layer deposition of Nd- and Eu-based oxide and hybrid thin films: Computationally guided precursor selection', Chemistry of Materials, vol. 38, no. 9, pp. 4422-4436. https://doi.org/10.1021/acs.chemmater.5c02689
dc.identifier.doi10.1021/acs.chemmater.5c02689
dc.identifier.endpage4436
dc.identifier.issn0897-4756
dc.identifier.issued9
dc.identifier.journaltitleChemistry of Materials
dc.identifier.startpage4422
dc.identifier.urihttps://hdl.handle.net/10468/19014
dc.identifier.volume38
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.relation.urihttps://www.scopus.com/pages/publications/105038688536
dc.rights© 2026, the Authors. Published by the American Chemical Society.
dc.rights.accessrightsopen access
dc.rights.licensenameAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.statusPeer reviewed
dc.subjectAtomic layer deposition
dc.subjectDeposition
dc.subjectOxides
dc.subjectPrecursors
dc.subjectThin films
dc.subject[TyndallMicroNano]
dc.titleAtomic and molecular layer deposition of Nd- and Eu-based oxide and hybrid thin films: Computationally guided precursor selectionen
dc.typeArticle (peer-reviewed)
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