Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

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dc.contributor.authorAlessio Verni, Giuseppe
dc.contributor.authorLong, Brenda
dc.contributor.authorGity, Farzan
dc.contributor.authorLanius, Martin
dc.contributor.authorSchüffelgen, Peter
dc.contributor.authorMussler, Gregor
dc.contributor.authorGrützmacher, Detlev
dc.contributor.authorGreer, James C.
dc.contributor.authorHolmes, Justin D.
dc.date.accessioned2018-11-15T16:25:01Z
dc.date.available2018-11-15T16:25:01Z
dc.date.issued2018-09-27
dc.date.updated2018-11-15T11:44:40Z
dc.description.abstractBismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are readily oxidised in ambient air, necessitating additional capping steps to prevent surface re-oxidation, thus limiting the processing potential of this material. This article describes an oxide removal and surface stabilization method performed on molecular beam epitaxy (MBE) grown bismuth thin-films using ambient air wet-chemistry. Alkanethiol molecules were used to dissolve the readily formed bismuth oxides through a catalytic reaction; the bare surface was then reacted with the free thiols to form an organic layer which showed resistance to complete reoxidation for up to 10 days.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAlessio Verni, G., Long, B., Gity, F., Lanius, M., Schüffelgen, P., Mussler, G., Grützmacher, D., Greer, J. and Holmes, J. D. (2018) 'Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers', RSC Advances, 8(58), pp. 33368-33373. doi: 10.1039/c8ra06840ben
dc.identifier.doi10.1039/c8ra06840b
dc.identifier.endpage33373en
dc.identifier.issn2046-2069
dc.identifier.issued58en
dc.identifier.journaltitleRSC Advancesen
dc.identifier.startpage33368en
dc.identifier.urihttps://hdl.handle.net/10468/7121
dc.identifier.volume8en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.relation.urihttps://pubs.rsc.org/en/Content/ArticleLanding/2018/RA/C8RA06840B
dc.rights© The Royal Society of Chemistry 2018. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc/3.0/en
dc.subjectBismuth compoundsen
dc.subjectCatalysisen
dc.subjectMolecular beam epitaxyen
dc.subjectOxide filmsen
dc.subjectStabilizationen
dc.subjectSurface reactionsen
dc.subjectThin filmsen
dc.subjectAlkanethiol moleculesen
dc.subjectBismuth thin filmsen
dc.subjectCatalytic reactionsen
dc.subjectElectronic applicationen
dc.subjectHigh electron mobilityen
dc.subjectNanoscale dimensionsen
dc.subjectQuantum confinement effectsen
dc.subjectSurface stabilizationen
dc.titleOxide removal and stabilization of bismuth thin films through chemically bound thiol layersen
dc.typeArticle (peer-reviewed)en
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