Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

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dc.contributor.authorThoma, Jiri
dc.contributor.authorLiang, Baolai
dc.contributor.authorReyner, Charles
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorWilliams, David P.
dc.contributor.authorHegarty, Stephen P.
dc.contributor.authorHuffaker, Diana L.
dc.contributor.authorHuyet, Guillaume
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderU.S. Department of Defense
dc.date.accessioned2017-07-28T09:23:24Z
dc.date.available2017-07-28T09:23:24Z
dc.date.issued2013
dc.description.abstractThe electro-optic properties of strained GaInAsSb/GaAs quantum wells (QWs) are investigated. A single QW p-i-n sample was grown by molecular beam epitaxy with antimony (Sb) pre-deposition technique. We numerically predict and experimentally verify a strong quantum confined Stark shift of 40 nm. We also predict a fast absorption recovery times crucial of high-speed optoelectronic devices mainly due to strong electron tunneling and thermionic emission. Predicted recovery times are corroborated by bias and temperature dependent time-resolved photoluminescence measurements indicating (<= 30 ps) recovery times. This makes GaInAsSb QW an attractive material particularly for electroabsorption modulators and saturable absorbers. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4775371)en
dc.description.sponsorshipScience Foundation Ireland (SFI) Strategic Research Cluster, PiFAS (07/SRC/I1173); United States Department of Defense (NSSEFF N00244-09-1-0091)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid13120
dc.identifier.citationThoma, J., Liang, B., Reyner, C., Ochalski, T., Williams, D., Hegarty, S. P., Huffaker, D. and Huyet, G. (2013) 'Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices', Applied Physics Letters, 102(1), pp. 013120. doi: 10.1063/1.4775371en
dc.identifier.doi10.1063/1.4775371
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued1
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4291
dc.identifier.volume102
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4775371
dc.rights© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Liang, B., Reyner, C., Ochalski, T., Williams, D., Hegarty, S. P., Huffaker, D. and Huyet, G. (2013) 'Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices', Applied Physics Letters, 102(1), pp. 013120 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4775371en
dc.subjectMolecular-beam epitaxyen
dc.subjectOptical-propertiesen
dc.subjectThreshold-currenten
dc.subjectSb surfactanten
dc.subjectLasersen
dc.subjectGainnasen
dc.subjectRecombinationen
dc.subjectQuantum wellsen
dc.subjectIII-V semiconductorsen
dc.subjectElectric fieldsen
dc.subjectPhotoluminescenceen
dc.subjectTunnelingen
dc.titleElectro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devicesen
dc.typeArticle (peer-reviewed)en
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