A review of self-seeded germanium nanowires: synthesis, growth mechanisms and potential applications

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dc.contributor.authorGarcia-Gil, AdriĆ 
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-01-11T16:29:08Z
dc.date.available2022-01-11T16:29:08Z
dc.date.issued2021-08-04
dc.date.updated2022-01-10T20:00:07Z
dc.description.abstractGe nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devicesen
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid2002en
dc.identifier.citationGarcia-Gil, A., Biswas, S. and Holmes, J. D. (2021) 'A Review of self-seeded germanium nanowires: synthesis, growth mechanisms and potential applications', Journal of Nanomaterials, 11 (8):2002 (40 pp). doi: 10.3390/nano11082002en
dc.identifier.doi10.3390/nano11082002en
dc.identifier.endpage40en
dc.identifier.issn2079-4991
dc.identifier.issued8en
dc.identifier.journaltitleJournal of Nanomaterialsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/12378
dc.identifier.volume11en
dc.language.isoenen
dc.publisherMDPIen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.urihttps://www.mdpi.com/2079-4991/11/8/2002
dc.rightsĀ© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) licenseen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectNanowireen
dc.subjectBottom-up synthesisen
dc.subjectSelf-seeded growthen
dc.subjectGermaniumen
dc.subjectGermanium alloysen
dc.subjectLiquid-solid growthen
dc.subjectChemical-vapor-depositionen
dc.subjectGroup-iv semiconductorsen
dc.subjectLithium ion batteriesen
dc.subjectElectrical-propertiesen
dc.subjectSilicon nanowiresen
dc.subjectHigh-capacityen
dc.subjectAnode materialsen
dc.subjectLaser-ablationen
dc.subjectCatalyst-freeen
dc.titleA review of self-seeded germanium nanowires: synthesis, growth mechanisms and potential applicationsen
dc.typeArticle (peer-reviewed)en
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