Oriented growth of metal and semiconductor nanostructures within aligned mesoporous channels

Petkov, Nikolay; Platschek, Barbara; Morris, Michael A.; Holmes, Justin D.; Bein, Thomas

Oriented growth of metal and semiconductor nanostructures within aligned mesoporous channels

dc.contributor.author	Petkov, Nikolay
dc.contributor.author	Platschek, Barbara
dc.contributor.author	Morris, Michael A.
dc.contributor.author	Holmes, Justin D.
dc.contributor.author	Bein, Thomas
dc.contributor.funder	Science Foundation Ireland	en
dc.contributor.funder	Deutsche Forschungsgemeinschaft	en
dc.date.accessioned	2019-07-11T13:54:47Z
dc.date.available	2019-07-11T13:54:47Z
dc.date.issued	2007-02-21
dc.date.updated	2019-06-28T16:22:00Z
dc.description.abstract	In the present work, we show how different types of inclusion chemistry can be used to generate oriented, high-aspect-ratio metal and semiconductor nanowires in insulating silica host structures prepared within anodic alumina membranes (AAMs). The structural features of the Pluronic123-templated silica filaments in the AAMs with their intriguing columnar and circular arrangement of mesopores allow for the inclusion of a variety of aligned 1D nanostructures ranging from metallic (Pt, Au, and Pd) and semiconductor (Ge) to carbon nanotubes and filaments. The synthetic techniques include wet chemical impregnation and reduction in precalcined mesopores, impregnation of surfactant-containing mesopore systems, and mass transport via supercritical fluid deposition in surfactant-containing mesopores. Important issues such as the crystallinity and continuity of the encapsulated wires as a function of material and deposition technique have been discussed.	en
dc.description.sponsorship	Deutsche Forschungsgemeinschaft (DFG Sonderforschungsbereich (SFB) project 486 (Germany))	en
dc.description.status	Peer reviewed	en
dc.description.version	Accepted Version	en
dc.format.mimetype	application/pdf	en
dc.identifier.citation	Petkov, N., Platschek, B., Morris, M. A., Holmes, J. D. and Bein, T. (2007) 'Oriented Growth of Metal and Semiconductor Nanostructures within Aligned Mesoporous Channels', Chemistry of Materials, 19(6), pp. 1376-1381. doi: 10.1021/cm0627239	en
dc.identifier.doi	10.1021/cm0627239	en
dc.identifier.endpage	1381	en
dc.identifier.issn	0897-4756
dc.identifier.issued	6	en
dc.identifier.journaltitle	Chemistry of Materials	en
dc.identifier.startpage	1376	en
dc.identifier.uri	https://hdl.handle.net/10468/8142
dc.identifier.volume	19	en
dc.language.iso	en	en
dc.publisher	American Chemical Society, ACS	en
dc.relation.project	info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/03/IN.3/I375/IE/The assembly of electronically important materials as structurally and size controlled nanowires into 3-dimensional architectures and construction of Prototype circuitry there from./	en
dc.relation.uri	https://pubs.acs.org/doi/abs/10.1021/cm0627239
dc.rights	© 2007 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm0627239	en
dc.subject	Nanostructures	en
dc.subject	Aspect ratio	en
dc.subject	Mass transfer	en
dc.subject	Nanowires	en
dc.subject	Semiconductor growth	en
dc.subject	Semiconductor materials	en
dc.subject	Synthesis (chemical)	en
dc.subject	Anodic alumina membranes (AAMs)	en
dc.subject	Semiconductor nanowires	en
dc.subject	Surfactant-containing mesopores	en
dc.subject	Synthetic techniques	en
dc.title	Oriented growth of metal and semiconductor nanostructures within aligned mesoporous channels	en
dc.type	Article (peer-reviewed)	en