Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

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dc.contributor.authorSchulz, Stefan
dc.contributor.authorTanner, Daniel S. P.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorCaro, Miguel A.
dc.contributor.authorTang, F.
dc.contributor.authorGriffiths, J. T.
dc.contributor.authorOehler, F.
dc.contributor.authorKappers, M. J.
dc.contributor.authorOliver, R. A.
dc.contributor.authorHumphreys, C. J.
dc.contributor.authorSutherland, D.
dc.contributor.authorDavies, M. J.
dc.contributor.authorDawson, Philip
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.contributor.funderEuropean Research Councilen
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2017-02-02T12:18:32Z
dc.date.available2017-02-02T12:18:32Z
dc.date.issued2016-11-28
dc.date.updated2017-02-02T12:04:40Z
dc.description.abstractWe present a combined theoretical and experimental analysis of the optical properties of m-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spectra show a large Stokes shift between the lowest exciton peak in the excitation spectra and the peak of the photoluminescence spectrum. This behavior is indicative of strong carrier localization effects. These experimental results are complemented by tight-binding calculations, accounting for random alloy fluctuations and Coulomb effects. The theoretical data explain the main features of the experimental spectra. Moreover, by comparison with calculations based on a virtual crystal approximation, the importance of carrier localization effects due to random alloy fluctuations is explicitly shown.en
dc.description.sponsorshipScience Foundation Ireland (SFI Project No. 13/SIRG/2210); United Kingdom Engineering and Physical Sciences Research Council (Grant Agreement Nos. EP\J001627\1 and EP\J003603\1).en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid223102
dc.identifier.citationSchulz, S., Tanner, D. S. P., O'Reilly, E. P., Caro, M. A., Tang, F., Griffiths, J. T., Oehler, F., Kappers, M. J., Oliver, R. A., Humphreys, C. J., Sutherland, D., Davies, M. J. and Dawson, P. (2016) 'Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells', Applied Physics Letters, 109(22), pp. 223102. doi:10.1063/1.4968591en
dc.identifier.doi10.1063/1.4968591
dc.identifier.endpage223102-4en
dc.identifier.issn0003-6951
dc.identifier.issued22en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage223102-1en
dc.identifier.urihttps://hdl.handle.net/10468/3553
dc.identifier.volume109en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP2::ERC/279361/EU/A multi-microscopy approach to the characterisation of Nitride semiconductors (MACONS)/MACONSen
dc.rights© 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters 109, 223102 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4968591en
dc.subjectGallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectLocalised statesen
dc.subjectPhotoluminescenceen
dc.subjectSemiconductor quantum wellsen
dc.subjectTight-binding calculationsen
dc.subjectWide band gap semiconductorsen
dc.subjectExcitonsen
dc.subjectLocalization effectsen
dc.subjectVisible spectraen
dc.titleTheoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wellsen
dc.typeArticle (peer-reviewed)en
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