Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices

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dc.contributor.authorThoma, Jiri
dc.contributor.authorLiang, Baolai
dc.contributor.authorLewis, Liam
dc.contributor.authorHegarty, Stephen P.
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorHuffaker, Diana L.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderU.S. Department of Defense
dc.date.accessioned2017-07-28T09:23:23Z
dc.date.available2017-07-28T09:23:23Z
dc.date.issued2013
dc.description.abstractWe characterize the electro-optical and lasing properties of a hybrid material consisting of multiple InAs quantum dot (QD) layers together with an InGaAs quantum well (QW) grown on a GaAs substrate. Over 40 nm Stark shift of the InGaAs QW leading to 9 dB extinction ratio was demonstrated. Lasing operation at the QD first excited state transition of 1070 nm was achieved and together with < 10 ps absorption recovery the system shows promise for high-speed mode-locked lasers and electro-modulated lasers. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4791565)en
dc.description.sponsorshipScience Foundation Ireland (SFI) Strategic Research Cluster, PiFAS (07/SRC/I1173); United States Department of Defense (NSSEFF N00244-09-1-0091)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid53110
dc.identifier.citationThoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices', Applied Physics Letters, 102(5), pp. 053110. doi: 10.1063/1.4791565en
dc.identifier.doi10.1063/1.4791565
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued5
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4288
dc.identifier.volume102
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4791565
dc.rights© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices', Applied Physics Letters, 102(5), pp. 053110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4791565en
dc.subjectDot laseren
dc.subjectFemtosecond pulsesen
dc.subjectTemperatureen
dc.subjectModulatorsen
dc.subjectDynamicsen
dc.subjectQuantum dotsen
dc.subjectQuantum wellsen
dc.subjectIII-V semiconductorsen
dc.subjectHybrid materialsen
dc.subjectExcited statesen
dc.titleElectro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devicesen
dc.typeArticle (peer-reviewed)en
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