Chemical functionalisation of silicon and germanium nanowires

Simple item page
dc.contributor.authorCollins, Gillian
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-09-12T15:20:50Z
dc.date.available2018-09-12T15:20:50Z
dc.date.issued2011-06-03
dc.date.updated2018-08-06T14:46:56Z
dc.description.abstractThe reduced dimensionality of nanowires implies that surface effects significantly influence their properties, which has important implications for the fabrication of nanodevices such as field effect transistors and sensors. This review will explore the strategies available for wet chemical functionalisation of silicon (Si) and germanium (Ge) nanowires. The stability and electrical properties of surface modified Si and Ge nanowires is explored. While this review will focus primarily on nanowire surfaces, much has been learned from work on planar substrates and differences between 2D and nanowire surfaces will be high-lighted. The possibility of band gap engineering and controlling electronic characteristics through surface modification provides new opportunities for future nanowire based applications. Nano-sensing is emerging as a major application of modified Si nanowires and the progress of these devices to date is discussed.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCollins, G. and Holmes, J. D. (2011) 'Chemical functionalisation of silicon and germanium nanowires', Journal of Materials Chemistry, 21(30), pp. 11052-11069. doi: 10.1039/C1JM11028Den
dc.identifier.doi10.1039/C1JM11028D
dc.identifier.endpage11069en
dc.identifier.issn0959-9428
dc.identifier.journaltitleJournal of Materials Chemistryen
dc.identifier.startpage11052en
dc.identifier.urihttps://hdl.handle.net/10468/6764
dc.identifier.volume21en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Centre for Science Engineering and Technology (CSET)/08/CE/I1432/IE/CSET CRANN: 2nd Term funding/en
dc.relation.urihttp://pubs.rsc.org/en/content/articlelanding/2011/jm/c1jm11028d
dc.rights© The Royal Society of Chemistry 2011en
dc.subjectElectric wireen
dc.subjectElectric propertiesen
dc.subjectField effect transistorsen
dc.subjectGermaniumen
dc.subjectNanowiresen
dc.subjectSiliconen
dc.subjectTwo dimensionalen
dc.titleChemical functionalisation of silicon and germanium nanowiresen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Collins_et_al_Manuscript_(JM-FEA-03-2011-011028).pdf
Size:
1.85 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Chemistry - Journal Articles
Tyndall National Institute - Journal Articles