On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors
dc.contributor.author | Sonnet, A. M. | |
dc.contributor.author | Galatage, R. V. | |
dc.contributor.author | Hurley, Paul K. | |
dc.contributor.author | Pelucchi, Emanuele | |
dc.contributor.author | Thomas, Kevin K. | |
dc.contributor.author | GocaliĆska, Agnieszka M. | |
dc.contributor.author | Huang, J. | |
dc.contributor.author | Goel, N. | |
dc.contributor.author | Bersuker, G. | |
dc.contributor.author | Kirk, W. P. | |
dc.contributor.author | Hinkle, C. L. | |
dc.contributor.author | Wallace, Robert M. | |
dc.contributor.author | Vogel, E. M. | |
dc.contributor.funder | National Science Foundation | |
dc.contributor.funder | Science Foundation Ireland | |
dc.contributor.funder | Higher Education Authority | |
dc.contributor.funder | Semiconductor Research Corporation | |
dc.date.accessioned | 2017-07-28T11:04:40Z | |
dc.date.available | 2017-07-28T11:04:40Z | |
dc.date.issued | 2011 | |
dc.description.abstract | The effective electron mobility of In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors with HfO2 gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3588255] | en |
dc.description.sponsorship | Semiconductor Research Corporation (SRC FCRP MARCO Materials Structures and Devices Center; National Science Foundation under ECCS Award No. 0925844); Science Foundation Ireland (Grant Nos. 08/U.S./I1546 and 05/IN.1/I25); Irish Higher Education Authority (Program for Research in Third Level Institutions 2007â2011 via the INSPIRE program) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Published Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.articleid | 193501 | |
dc.identifier.citation | Sonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, 98(19), pp. 193501. doi: 10.1063/1.3588255 | en |
dc.identifier.doi | 10.1063/1.3588255 | |
dc.identifier.endpage | 3 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.issued | 19 | |
dc.identifier.journaltitle | Applied Physics Letters | en |
dc.identifier.startpage | 1 | |
dc.identifier.uri | https://hdl.handle.net/10468/4322 | |
dc.identifier.volume | 98 | |
dc.language.iso | en | en |
dc.publisher | AIP Publishing | en |
dc.relation.uri | http://aip.scitation.org/doi/abs/10.1063/1.3588255 | |
dc.rights | © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Sonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, 98(19), pp. 193501 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3588255 | en |
dc.subject | Mobility | en |
dc.subject | Inversion | en |
dc.subject | Mosfets | en |
dc.subject | Layers | en |
dc.subject | Model | en |
dc.subject | Doping | en |
dc.subject | Carrier mobility | en |
dc.subject | Electron mobility | en |
dc.subject | Electric fields | en |
dc.title | On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors | en |
dc.type | Article (peer-reviewed) | en |
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