On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors

dc.contributor.authorSonnet, A. M.
dc.contributor.authorGalatage, R. V.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorHuang, J.
dc.contributor.authorGoel, N.
dc.contributor.authorBersuker, G.
dc.contributor.authorKirk, W. P.
dc.contributor.authorHinkle, C. L.
dc.contributor.authorWallace, Robert M.
dc.contributor.authorVogel, E. M.
dc.contributor.funderNational Science Foundation
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderHigher Education Authority
dc.contributor.funderSemiconductor Research Corporation
dc.date.accessioned2017-07-28T11:04:40Z
dc.date.available2017-07-28T11:04:40Z
dc.date.issued2011
dc.description.abstractThe effective electron mobility of In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors with HfO2 gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3588255]en
dc.description.sponsorshipSemiconductor Research Corporation (SRC FCRP MARCO Materials Structures and Devices Center; National Science Foundation under ECCS Award No. 0925844); Science Foundation Ireland (Grant Nos. 08/U.S./I1546 and 05/IN.1/I25); Irish Higher Education Authority (Program for Research in Third Level Institutions 2007–2011 via the INSPIRE program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid193501
dc.identifier.citationSonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, 98(19), pp. 193501. doi: 10.1063/1.3588255en
dc.identifier.doi10.1063/1.3588255
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued19
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4322
dc.identifier.volume98
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3588255
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Sonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, 98(19), pp. 193501 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3588255en
dc.subjectMobilityen
dc.subjectInversionen
dc.subjectMosfetsen
dc.subjectLayersen
dc.subjectModelen
dc.subjectDopingen
dc.subjectCarrier mobilityen
dc.subjectElectron mobilityen
dc.subjectElectric fieldsen
dc.titleOn the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistorsen
dc.typeArticle (peer-reviewed)en
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