An analysis of 1.55 mu m InAs/InP quantum dash lasers

dc.contributor.authorHeck, Susannah C.
dc.contributor.authorHealy, Sorcha B.
dc.contributor.authorOsborne, Simon
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorLelarge, Francois
dc.contributor.authorPoingt, F.
dc.contributor.authorAccard, A.
dc.contributor.authorPommereau, F.
dc.contributor.authorLe Gouezigou, O.
dc.contributor.authorDagens, B.
dc.contributor.funderSixth Framework Programme
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:47:33Z
dc.date.available2017-07-28T11:47:33Z
dc.date.issued2008
dc.description.abstractCalculations show that electron states are not confined in the dashes in 1.55 mu m InAs/InP quantum dash-in-a-well laser structures. The combination of strain and three-dimensional confinement reduces the calculated density of states (DOS) near the valence band maximum, with the conduction and valence DOS then almost equal close to the band edges. Calculations and photoabsorption measurements show strongly polarized spontaneous emission and gain spectra. Experimental analysis shows the room temperature threshold current is dominated by nonradiative current paths. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2952194)en
dc.description.sponsorshipEuropean Commission (ZODIAC IST European project)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid251105
dc.identifier.citationHeck, S. C., Healy, S. B., Osborne, S., O’Reilly, E. P., Lelarge, F., Poingt, F., Accard, A., Pommereau, F., Gouezigou, O. L. and Dagens, B. (2008) 'An analysis of 1.55μm InAs∕InP quantum dash lasers', Applied Physics Letters, 92(25), pp. 251105. doi: 10.1063/1.2952194en
dc.identifier.doi10.1063/1.2952194
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued25
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4368
dc.identifier.volume92
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2952194
dc.rights© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Heck, S. C., Healy, S. B., Osborne, S., O’Reilly, E. P., Lelarge, F., Poingt, F., Accard, A., Pommereau, F., Gouezigou, O. L. and Dagens, B. (2008) 'An analysis of 1.55μm InAs∕InP quantum dash lasers', Applied Physics Letters, 92(25), pp. 251105 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2952194en
dc.subjectSemiconductor-lasersen
dc.subjectAmplifiersen
dc.subjectStrainen
dc.subjectDotsen
dc.subjectIII-V semiconductorsen
dc.subjectBand structureen
dc.subjectQuantum dotsen
dc.subjectQuantum wellsen
dc.subjectPolarizationen
dc.titleAn analysis of 1.55 mu m InAs/InP quantum dash lasersen
dc.typeArticle (peer-reviewed)en
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