Doping top-down e-beam fabricated germanium nanowires using molecular monolayers

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dc.contributor.authorLong, Brenda
dc.contributor.authorAlessio Verni, Giuseppe
dc.contributor.authorO'Connell, John
dc.contributor.authorShayesteh, Maryam
dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorCarolan, Patrick B.
dc.contributor.authorO'Connell, Dan
dc.contributor.authorKuhn, K. J.
dc.contributor.authorClendenning, Scott B.
dc.contributor.authorNagle, Roger E.
dc.contributor.authorDuffy, Ray
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2017-05-09T13:56:16Z
dc.date.available2017-05-09T13:56:16Z
dc.date.issued2016-10-27
dc.date.updated2017-04-20T16:40:31Z
dc.description.abstractThis paper describes molecular layer doping of Ge nanowires. Molecules containing dopant atoms are chemically bound to a germanium surface. Subsequent annealing enables the dopant atoms from the surface bound molecules to diffuse into the underlying substrate. Electrical and material characterization was carried out, including an assessment of the Ge surface, carrier concentrations and crystal quality. Significantly, the intrinsic resistance of Ge nanowires with widths down to 30 nm, doped using MLD, was found to decrease by several orders of magnitude.en
dc.description.sponsorshipScience Foundation Ireland (Grant Number SFI/12/RC/2278)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLong, B., Alessio Verni, G., O’Connell, J., Shayesteh, M., Gangnaik, A., Georgiev, Y. M., Carolan, P., O’Connell, D., Kuhn, K. J., Clendenning, S. B., Nagle, R., Duffy, R. and Holmes, J. D. (2017) 'Doping top-down e-beam fabricated germanium nanowires using molecular monolayers', Materials Science in Semiconductor Processing, 62, pp. 196-200. doi: 10.1016/j.mssp.2016.10.038en
dc.identifier.doi10.1016/j.mssp.2016.10.038
dc.identifier.endpage200en
dc.identifier.issn1369-8001
dc.identifier.journaltitleMaterials Science In Semiconductor Processingen
dc.identifier.startpage196en
dc.identifier.urihttps://hdl.handle.net/10468/3934
dc.identifier.volume62en
dc.language.isoenen
dc.publisherElsevier Ltd.en
dc.rights© 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectMolecular layer dopingen
dc.subjectNanowiresen
dc.subjectSemiconductorsen
dc.subjectGermaniumen
dc.subjectConformalen
dc.subjectNon-destructiveen
dc.titleDoping top-down e-beam fabricated germanium nanowires using molecular monolayersen
dc.typeArticle (peer-reviewed)en
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