InGaN-based red micro-light-emitting diodes for display applications

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dc.contributor.authorLi, Zhi
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorLi, Changhao
dc.contributor.authorGenc, Muhammet
dc.contributor.authorHazarika, Abhinandan
dc.contributor.authorKim, Bumjoon
dc.contributor.authorMin Lee, Soo
dc.contributor.authorHanser, Drew
dc.contributor.authorCorbett, Brian
dc.contributor.editorKurimura, Sunao
dc.contributor.editorYagi, Tetsuya
dc.contributor.funderTaighde Éireann - Research Ireland, SFI-12/RC/2276_P2_IPIC-SFI-IRC_22/PATH-S/10800
dc.date.accessioned2026-02-11T16:00:04Z
dc.date.available2026-02-11T16:00:04Z
dc.date.embargoedUntil16/11/2026
dc.date.issued2025-11-16
dc.description.abstractThe emerging InGaN-based red light-emitting diodes (LEDs) are promising candidates for display applications due to their potential high efficiency. In this work, we first investigated the electrical and optical properties of InGaN red LEDs on sapphire with various chip sizes (from 500×500 to 15×15 µm2). By detailed characterization on the current-voltage measurement and current dependent light output power measurement, the negligible size-dependent effect was revealed. The suppressed surface recombination effect may be due to the effective carrier trapping effect by the V-pits, which prevents the carriers from flowing to the sidewalls. Furthermore, we developed releasing techniques for the InGaN red LEDs on silicon, enabling the integration via micro-transfer printing. The device performance after transfer printing was characterized in detail. The integration of red, green and blue InGaN-based micro-LEDs via micro-transfer printing were successfully demonstrated. This work paved the way for integrating InGaN red LEDs in the displays for higher performance.en
dc.description.sponsorshipThis work is funded by Research Ireland Pathway Program (SFI-IRC_22/PATH-S/10800) and Irish Photonics Integration Centre (IPIC) Program (SFI-12/RC/2276_P2_IPIC).
dc.description.statusPeer reviewed
dc.description.versionAccepted Version
dc.format.extent4
dc.format.extent7532655
dc.format.mimetypeapplication/pdf
dc.identifier.authororcidLi, Zhi§0000-0002-0417-832X
dc.identifier.authororcidRoycroft, Brendan
dc.identifier.authororcidLi, Changhao
dc.identifier.authororcidGenc, Muhammet
dc.identifier.authororcidHazarika, Abhinandan
dc.identifier.authororcidKim, Bumjoon
dc.identifier.authororcidMin Lee, Soo
dc.identifier.authororcidHanser, Drew
dc.identifier.authororcidCorbett, Brian§0000-0002-9002-8212
dc.identifier.authororcidKurimura, Sunao
dc.identifier.authororcidYagi, Tetsuya
dc.identifier.citationLi, Z., Roycroft, B., Li, C., Genc, M., Hazarika, A., Kim, B., Min Lee, S., Hanser, D. and Corbett, B. (2025) 'InGaN-based red micro-light-emitting diodes for display applications', in Kurimura, S. and Yagi, T. (eds) Proceedings of Laser Display and Lighting Conference 2025. Springer Proceedings in Physics (SPPHY), 429, pp. 25-28. https://doi.org/10.1007/978-981-96-9782-3_6
dc.identifier.doi10.1007/978-981-96-9782-3_6
dc.identifier.endpage28
dc.identifier.isbn978-981-96-9782-3
dc.identifier.journaltitleProceedings of Laser Display and Lighting Conference 2025
dc.identifier.otherORCID: /0000-0002-0417-832X/work/205466380
dc.identifier.otherORCID: /0000-0002-9002-8212/work/205466694
dc.identifier.startpage25
dc.identifier.urihttps://hdl.handle.net/10468/18519
dc.language.isoen
dc.publisherSpringer Nature
dc.relation.ispartofseriesSpringer Proceedings in Physics (SPPHY)
dc.rights© 2025, the Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
dc.subjectInGaN
dc.subjectRed LEDs
dc.subjectSurface recombination
dc.subjectDisplays
dc.subjectTransfer printing
dc.subject[TyndallPhotonics]
dc.titleInGaN-based red micro-light-emitting diodes for display applicationsen
dc.typeConference item
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