Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor

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dc.check.infoAccess to this article is restricted for 12 months after original publication by request of the publisher.en
dc.contributor.authorCoyle, Jason P.
dc.contributor.authorDey, Gangotri
dc.contributor.authorSirianni, Eric R.
dc.contributor.authorKemmell, Marianna L.
dc.contributor.authorYap, Glenn P. A.
dc.contributor.authorRitala, Mikko
dc.contributor.authorLeskela, Markku
dc.contributor.authorElliott, Simon D.
dc.contributor.authorBarry, Seán T.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2013-04-10T16:08:59Z
dc.date.available2014-03-15T05:00:05Z
dc.date.copyright2013-03-14
dc.date.issued2013-03
dc.description.abstractTwo novel N-heterocyclic carbene (NHC)-containing copper(I) amides are reported as atomic layer deposition (ALD) precursors. 1,3-Diisopropyl-imidazolin-2-ylidene copper hexamethyldisilazide (1) and 4,5-dimethyl-1,3-diisopropyl-imidazol-2-ylidene copper hexamethyldisilazide (2) were synthesized and structurally characterized. The thermal behavior of both compounds was studied by thermogravimetric analysis (TGA), and they were both found to be reasonably volatile compounds. Compound 1 had no residual mass in the TGA and showed long-term stability at temperatures as high as 130 °C, while 2 had a residual mass of 7.4%. Copper metal with good resistivity was deposited using 1 by plasma-enhanced atomic layer deposition. The precursor demonstrated self-limiting behavior indicative of ALD, and gave a growth rate of 0.2 Å/cycle. Compound 2 was unsuccessful as an ALD precursor under similar conditions. Density functional theory calculations showed that both compounds adsorb dissociatively onto a growing copper film as long as there is some atomic roughness, via cleavage of the Cu-carbene bond.en
dc.description.sponsorshipNSERC Discovery and GreenCentre Canada; Picosun, Finland; Science Foundation Ireland (09.IN1.I2628); National Science Foundation (NSF-CRIF 1048367)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationJason P. Coyle, Gangotri Dey, Eric R. Sirianni, Marianna L. Kemell Glenn P. A. Yap, Mikko Ritala, Markku Leskela, Simon D. Elliott Sean T. Barry (2013). Deposition of Copper By Plasma-Enhanced Atomic Layer Deposition Using a Novel N-Heterocyclic Carbene Precursor. Chemistry of Materials, 25 (7), pp 1132–1138. DOI: 10.1021/cm400215qen
dc.identifier.doi10.1021/cm400215q
dc.identifier.endpage1138en
dc.identifier.issued7en
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage1132en
dc.identifier.urihttps://hdl.handle.net/10468/1056
dc.identifier.volume25en
dc.language.isoenen
dc.publisherAmerican Chemical Society Publicationsen
dc.relation.urihttp://pubs.acs.org/doi/abs/10.1021/cm400215q
dc.rights© 2013, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/cm400215qen
dc.subjectCopper amideen
dc.subjectCarbeneen
dc.subjectAtomic layer depositionen
dc.subjectPlasmaen
dc.subjectMetal thin filmen
dc.titleDeposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursoren
dc.typeArticle (peer-reviewed)en
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