Persistence of ferroelectricity close to unit-cell thickness in structurally disordered Aurivillius phases

dc.check.date2021-12-01
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorKeeney, Lynette
dc.contributor.authorSaghi, Zineb
dc.contributor.authorO'Sullivan, Marita
dc.contributor.authorAlaria, Jonathan
dc.contributor.authorSchmidt, Michael
dc.contributor.authorColfer, Louise
dc.contributor.funderRoyal Societyen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHorizon 2020en
dc.contributor.funderRoyal Irish Academyen
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.contributor.funderTyndall National Institute, Irelanden
dc.date.accessioned2021-01-22T11:46:46Z
dc.date.available2021-01-22T11:46:46Z
dc.date.issued2020-12-01
dc.date.updated2021-01-22T11:25:14Z
dc.description.abstractMultiferroics intertwine ferroelectric and ferromagnetic properties, allowing for novel ways of manipulating data and storing information. To optimize the unique Bi6TixFeyMnzO18 (B6TFMO), multiferroic, ultrathin (<7 nm) epitaxial films were synthesized by direct liquid injection chemical vapor deposition (DLI-CVD). Epitaxial growth is, however, confounded by the volatility of bismuth, particularly when utilizing a postgrowth anneal at 850 °C. This results in microstructural defects, intergrowths of differing Aurivillius phases, and formation of impurities. Improved single-step DLI-CVD processes were subsequently developed at 710 and 700 °C, enabling lowering of crystallization temperature by 150 °C and significantly enhancing film quality and sample purity. Ferroelectricity is confirmed in 5 nm (1 unit-cell thick) B6TFMO films, with tensile epitaxial strain enhancing the piezoresponse. In-plane ferroelectric switching is demonstrated at 1.5 unit-cell thickness. The persistence of stable ferroelectricity near unit-cell thickness in B6TFMO, both in-plane and out-of-plane, is significant and initiates possibilities for miniaturizing novel multiferroic-based devices.en
dc.description.sponsorshipRoyal Society-Science Foundation Ireland (University Research Fellowship UF 140263; Enhancement Award RGF\EA\180206); Royal Irish Academy/Royal Society (International Exchange Cost-Share Program 2019); Engineering and Physical Sciences Research Council (Grant EP/P001513/1); Tyndall National Institute, Ireland (Catalyst Award 4881/R18549)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKeeney, L., Saghi, Z., O'Sullivan, M., Alaria, J., Schmidt, M. and Colfer, L. (2020) 'Persistence of ferroelectricity close to unit-cell thickness in structurally disordered Aurivillius phases', Chemistry of Materials, 32(24), pp. 10511-10523. doi: 10.1021/acs.chemmater.0c03454en
dc.identifier.doi10.1021/acs.chemmater.0c03454en
dc.identifier.eissn1520-5002
dc.identifier.endpage10523en
dc.identifier.issn0897-4756
dc.identifier.issued24en
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage10511en
dc.identifier.urihttps://hdl.handle.net/10468/10951
dc.identifier.volume32en
dc.language.isoenen
dc.publisherACS Publicationsen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENTen
dc.rights© 2020, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, after technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.chemmater.0c03454en
dc.subjectBismuth titanateen
dc.subjectThin filmsen
dc.subjectPolarizationen
dc.subjectTechnologyen
dc.subjectBehavioren
dc.subjectEpitaxyen
dc.titlePersistence of ferroelectricity close to unit-cell thickness in structurally disordered Aurivillius phasesen
dc.typeArticle (peer-reviewed)en
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