Access to this article is restricted until 12 months after publication by request of the publisher.. Restriction lift date: 2021-12-01
Persistence of ferroelectricity close to unit-cell thickness in structurally disordered Aurivillius phases
dc.check.date | 2021-12-01 | |
dc.check.info | Access to this article is restricted until 12 months after publication by request of the publisher. | en |
dc.contributor.author | Keeney, Lynette | |
dc.contributor.author | Saghi, Zineb | |
dc.contributor.author | O'Sullivan, Marita | |
dc.contributor.author | Alaria, Jonathan | |
dc.contributor.author | Schmidt, Michael | |
dc.contributor.author | Colfer, Louise | |
dc.contributor.funder | Royal Society | en |
dc.contributor.funder | Science Foundation Ireland | en |
dc.contributor.funder | Horizon 2020 | en |
dc.contributor.funder | Royal Irish Academy | en |
dc.contributor.funder | Engineering and Physical Sciences Research Council | en |
dc.contributor.funder | Tyndall National Institute, Ireland | en |
dc.date.accessioned | 2021-01-22T11:46:46Z | |
dc.date.available | 2021-01-22T11:46:46Z | |
dc.date.issued | 2020-12-01 | |
dc.date.updated | 2021-01-22T11:25:14Z | |
dc.description.abstract | Multiferroics intertwine ferroelectric and ferromagnetic properties, allowing for novel ways of manipulating data and storing information. To optimize the unique Bi6TixFeyMnzO18 (B6TFMO), multiferroic, ultrathin (<7 nm) epitaxial films were synthesized by direct liquid injection chemical vapor deposition (DLI-CVD). Epitaxial growth is, however, confounded by the volatility of bismuth, particularly when utilizing a postgrowth anneal at 850 °C. This results in microstructural defects, intergrowths of differing Aurivillius phases, and formation of impurities. Improved single-step DLI-CVD processes were subsequently developed at 710 and 700 °C, enabling lowering of crystallization temperature by 150 °C and significantly enhancing film quality and sample purity. Ferroelectricity is confirmed in 5 nm (1 unit-cell thick) B6TFMO films, with tensile epitaxial strain enhancing the piezoresponse. In-plane ferroelectric switching is demonstrated at 1.5 unit-cell thickness. The persistence of stable ferroelectricity near unit-cell thickness in B6TFMO, both in-plane and out-of-plane, is significant and initiates possibilities for miniaturizing novel multiferroic-based devices. | en |
dc.description.sponsorship | Royal Society-Science Foundation Ireland (University Research Fellowship UF 140263; Enhancement Award RGF\EA\180206); Royal Irish Academy/Royal Society (International Exchange Cost-Share Program 2019); Engineering and Physical Sciences Research Council (Grant EP/P001513/1); Tyndall National Institute, Ireland (Catalyst Award 4881/R18549) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Keeney, L., Saghi, Z., O'Sullivan, M., Alaria, J., Schmidt, M. and Colfer, L. (2020) 'Persistence of ferroelectricity close to unit-cell thickness in structurally disordered Aurivillius phases', Chemistry of Materials, 32(24), pp. 10511-10523. doi: 10.1021/acs.chemmater.0c03454 | en |
dc.identifier.doi | 10.1021/acs.chemmater.0c03454 | en |
dc.identifier.eissn | 1520-5002 | |
dc.identifier.endpage | 10523 | en |
dc.identifier.issn | 0897-4756 | |
dc.identifier.issued | 24 | en |
dc.identifier.journaltitle | Chemistry of Materials | en |
dc.identifier.startpage | 10511 | en |
dc.identifier.uri | https://hdl.handle.net/10468/10951 | |
dc.identifier.volume | 32 | en |
dc.language.iso | en | en |
dc.publisher | ACS Publications | en |
dc.relation.project | info:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENT | en |
dc.rights | © 2020, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, after technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.chemmater.0c03454 | en |
dc.subject | Bismuth titanate | en |
dc.subject | Thin films | en |
dc.subject | Polarization | en |
dc.subject | Technology | en |
dc.subject | Behavior | en |
dc.subject | Epitaxy | en |
dc.title | Persistence of ferroelectricity close to unit-cell thickness in structurally disordered Aurivillius phases | en |
dc.type | Article (peer-reviewed) | en |
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