Mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium

Simple item page
dc.contributor.authorElam, J. W.
dc.contributor.authorPellin, M. J.
dc.contributor.authorElliott, Simon D.
dc.contributor.authorZydor, Aleksandra
dc.contributor.authorFaia, M. C.
dc.contributor.authorHupp, J. T.
dc.contributor.funderUniversity of Chicago
dc.contributor.funderU.S. Department of Energy
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-28T13:20:06Z
dc.date.available2017-07-28T13:20:06Z
dc.date.issued2007
dc.description.abstractThe mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium and H(2)O was examined using ab initio calculations of hydrolysis energies to predict the order of ligand loss. These predictions were tested using in situ mass spectrometric measurements which revealed that the methyl ligand, and 65% of the methylcyclopentadienyl ligands are lost during the zirconium precursor adsorption. The remaining 35% of the methylcyclopentadienyl ligands and the methoxy ligand are lost during the subsequent H(2)O exposure. These measurements agree very well with the predictions, demonstrating that thermodynamic calculations are a simple and accurate predictor for the reactivities of these compounds. (c) 2007 American Institute of Physics. (DOI: 10.1063/1.2824814)en
dc.description.sponsorshipUniversity of Chicago (University of Chicago—Argonne, LLC as Operator of Argonne National Laboratory (“Argonne”) under Contract No. DEAC02-06CH11357 with the U.S. Department of Energy.) U.S. Department of Energy (Basic Energy Sciences Program (DE-FG02-87ER13808)); European Commission (Sixth Framework project REALISE (NMP4-CT-2006-016172)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid253123
dc.identifier.citationElam, J. W., Pellin, M. J., Elliott, S. D., Zydor, A., Faia, M. C. and Hupp, J. T. (2007) 'Mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium', Applied Physics Letters, 91(25), pp. 253123. doi: 10.1063/1.2824814en
dc.identifier.doi10.1063/1.2824814
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued25
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4375
dc.identifier.volume91
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2824814
dc.rights© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Elam, J. W., Pellin, M. J., Elliott, S. D., Zydor, A., Faia, M. C. and Hupp, J. T. (2007) 'Mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium', Applied Physics Letters, 91(25), pp. 253123 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2824814en
dc.subjectPrecursorsen
dc.subjectGrowthen
dc.subjectSiliconen
dc.subjectWateren
dc.subjectHfo2en
dc.subjectZro2en
dc.subjectAtomic layer depositionen
dc.subjectZirconiumen
dc.subjectThin film growthen
dc.subjectSurface reactionsen
dc.subjectHydrogen reactionsen
dc.titleMechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconiumen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3351.pdf
Size:
332.15 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles