Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

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dc.contributor.authorChristian, G. M.
dc.contributor.authorSchulz, Stefan
dc.contributor.authorKappers, M. J.
dc.contributor.authorHumphreys, C. J.
dc.contributor.authorOliver, R. A.
dc.contributor.authorDawson, Philip
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-12-12T12:07:05Z
dc.date.available2018-12-12T12:07:05Z
dc.date.issued2018-10-02
dc.date.updated2018-12-12T11:51:56Z
dc.description.abstractIn this paper we report on the emergence of a high energy band at high optically excited carrier densities in the low temperature photoluminescence spectra from polar InGaN/GaN single quantum well structures. This high energy band emerges at carrier densities when the emission from the localized ground states begins to saturate. We attribute this high energy band to recombination involving higher energy less strongly localized electron and hole states that are populated once the localized ground states become saturated; this assignment is supported by the results from an atomistic tight-binding model. A particular characteristic of the recombination at the high carrier densities is that the overall forms of the photoluminescence decay curves bear great similarity to those from semiconductor quantum dots. The decay curves consist of plateaus where the photoluminescence intensity is constant with time as a result of Pauli state blocking in the high energy localized states followed by a rapid decrease in intensity once the carrier density is sufficiently low that the states involved are no longer saturated.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council, United Kingdom (Grants No. EP/I012591/1, No. EP/M010627/1, and No. EP/M010589/1); Science Foundation Ireland (Grants No. 13/SIRG/2210 and No. 17/CDA/4789)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationChristian, G. M., Schulz, S., Kappers, M. J., Humphreys, C. J., Oliver, R. A. and Dawson, P. (2018) 'Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities', Physical Review B, 98(15), 155301 (9 pp). doi: 10.1103/PhysRevB.98.155301en
dc.identifier.doi10.1103/PhysRevB.98.155301
dc.identifier.endpage155301-9en
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.issued15en
dc.identifier.journaltitlePhysical Review Ben
dc.identifier.startpage155301-1en
dc.identifier.urihttps://hdl.handle.net/10468/7202
dc.identifier.volume98en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/en
dc.relation.urihttps://link.aps.org/doi/10.1103/PhysRevB.98.155301
dc.rights© 2018 American Physical Societyen
dc.subjectPhotoluminescenceen
dc.subjectInGaN/GaN quantum well structureen
dc.subjectPhoton energyen
dc.subjectPhotoluminescence spectraen
dc.titleRecombination from polar InGaN/GaN quantum well structures at high excitation carrier densitiesen
dc.typeArticle (peer-reviewed)en
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