Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

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dc.check.date2019-03-20
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorBlenkhorn, William
dc.contributor.authorSchulz, Stefan
dc.contributor.authorTanner, Daniel
dc.contributor.authorOliver, Rachel
dc.contributor.authorKappers, M. J.
dc.contributor.authorHumphreys, C. J.
dc.contributor.authorDawson, Philip
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.date.accessioned2018-04-03T15:30:33Z
dc.date.available2018-04-03T15:30:33Z
dc.date.issued2018-03-20
dc.date.updated2018-04-03T15:13:13Z
dc.description.abstractIn this paper we report on changes in the form of the low temperature (12K) photoluminescence spectra of an InGaN/GaN quantum well structure as a function of excitation photon energy. As the photon energy is progressively reduced we observe at a critical energy a change in the form of the spectra from one which is determined by the occupation of the complete distribution of hole localisation centres to one which is determined by the resonant excitation of specific localisations sites. This change is governed by an effective mobility edge whereby the photo-excited holes remain localised at their initial energy and are prevented from scattering to other localisation sites. This assignment is confirmed by the results of atomistic tight binding calculations which show that the wave function overlap of the lowest lying localised holes with other hole states is low compared with the overlap of higher lying hole states with other higher lying hole states.en
dc.description.sponsorshipUnited Kingdom Engineering and Physical Sciences Research Council (grant Nos. EP/M010589/1, EP/I012591/1, EP/M010627/1 and EP/H049533/1)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBlenkhorn, W., Schulz, S., Tanner, D., Oliver, R., Kappers, M. J., Humphreys, C. J. and Dawson, P. (2018) Journal of Physics: Condensed Matter, In Press, doi: 10.1088/1361-648X/aab818en
dc.identifier.doi10.1088/1361-648X/aab818
dc.identifier.endpage18en
dc.identifier.issn1361-648X
dc.identifier.journaltitleJournal of Physics: Condensed Matteren
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/5726
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/M010589/1/GB/Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/I012591/1/GB/Lighting the Future/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/M010627/1/GB/Beyond Blue: New Horizons in Nitrides/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/en
dc.relation.urihttp://iopscience.iop.org/article/10.1088/1361-648X/aab818
dc.rights© 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://iopscience.iop.org/10.1088/1361-648X/aab818. As the Version of Record of this article is going to be published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectPhoton energyen
dc.subjectPhotoluminescence spectraen
dc.subjectInGaN/GaN quantum well structureen
dc.subjectExcitationen
dc.titleResonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structuresen
dc.typeArticle (peer-reviewed)en
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