Field-induced reversible insulator-to-metal transition and the onset of ferroelectricity in molybdenum trioxide films

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dc.contributor.authorDragoman, Mirceaen
dc.contributor.authorModreanu, Mirceaen
dc.contributor.authorSheehan, Brendanen
dc.contributor.authorVulpe, Silviuen
dc.contributor.authorRomanitan, Cosminen
dc.contributor.authorAldrigo, Martinoen
dc.contributor.authorDinescu, Adrianen
dc.contributor.authorSerban, Andreea Biancaen
dc.contributor.authorDragoman, Danielaen
dc.contributor.funderHorizon 2020en
dc.contributor.funderUnitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovariien
dc.date.accessioned2023-06-14T15:37:56Z
dc.date.available2023-06-14T15:37:56Z
dc.date.issued2023-06-01en
dc.description.abstractThis paper presents the experimental evidence of reversible insulator–metal transition (IMT) in thin-film amorphous molybdenum trioxide (MoO3) induced by electric fields of just a few volts. The presence of oxygen vacancies in MoO3 is considered to play a significant role in the reported reversible IMT. The oxygen vacancies not only impact MoO3 stoichiometry but also the optical bandgap. The subthreshold slope for IMT in 10 nm-thick MoO3-based devices is 48.3 mV/decade, which represents a transition from an insulator to a metallic state, and the electric field threshold for such a transition was found to be equal to 0.034 V/Å. Following the IMT in MoO3, there are six orders of magnitude differences between the resistivity of the insulator state (27.5 M Ω at −9 V) and the metallic state (80 Ω between +5 and +9 V). In addition, we reported stabilization of a nanocrystalline hexagonal MoO3 (h-MoO3) phase in thicker MoO3 (150 nm-thick) in the presence of oxygen vacancies that behave as a wide bandgap (3.1 eV) ferroelectric semiconductor with a coercive field of about 50 kV/cm, a saturation polarization of about 30 μC/cm2, and a remanent polarization of about 10 μC/cm2. This ferroelectricity in nanocrystalline h-MoO3 (150 nm-thick) remains stable even after 8 months of storage of the sample in ambient conditions, with remanent polarization increasing up to 20 μC/cm2. These are unexpected results from MoO3.en
dc.description.sponsorshipUnitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii (PN-III-P4-PCE-2021-0223; PN-III-P3-3.6-H2020-2020-0072; PN-III-P2-2.1-PED-2021-3183; PN 23.21.01.06)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid215101en
dc.identifier.citationDragoman, M., Modreanu, M., Sheehan, B., Vulpe, S., Romanitan, C., Aldrigo, M., Dinescu, A., Serban, A. B. and Dragoman, D. (2023) 'Field-induced reversible insulator-to-metal transition and the onset of ferroelectricity in molybdenum trioxide films', Journal of Applied Physics, 133(21), 215101 (11pp). doi: 10.1063/5.0151117en
dc.identifier.doi10.1063/5.0151117en
dc.identifier.eissn1089-7550en
dc.identifier.endpage11en
dc.identifier.issn0021-8979en
dc.identifier.issued21en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/14589
dc.identifier.volume133en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/951761/EU/NANOMATERIALS ENABLING SMART ENERGY HARVESTING FOR NEXT-GENERATION INTERNET-OF-THINGS/NANO-EHen
dc.rights© 2023, the Authors. Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared as: Dragoman, M., Modreanu, M., Sheehan, B., Vulpe, S., Romanitan, C., Aldrigo, M., Dinescu, A., Serban, A. B. and Dragoman, D. (2023) 'Field-induced reversible insulator-to-metal transition and the onset of ferroelectricity in molybdenum trioxide films', Journal of Applied Physics, 133(21), 215101 (11pp), doi: 10.1063/5.0151117, and may be found at: https://doi.org/10.1063/5.0151117en
dc.subjectReversible insulator–metal transition (IMT)en
dc.subjectThin-film amorphous molybdenum trioxide (MoO3)en
dc.subjectElectric fielden
dc.titleField-induced reversible insulator-to-metal transition and the onset of ferroelectricity in molybdenum trioxide filmsen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue21en
oaire.citation.volume133en
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