Field-effect transistor figures of merit for vapor–liquid–solid-grown Ge1-xSnx (x = 0.03–0.09) nanowire devices
| dc.contributor.author | Galluccio, Emmanuele | |
| dc.contributor.author | Doherty, Jessica | |
| dc.contributor.author | Biswas, Subhajit | |
| dc.contributor.author | Holmes, Justin D. | |
| dc.contributor.author | Duffy, Ray | |
| dc.contributor.funder | Science Foundation Ireland | en |
| dc.date.accessioned | 2020-06-18T16:32:44Z | |
| dc.date.available | 2020-06-18T16:32:44Z | |
| dc.date.issued | 2020-04-08 | |
| dc.description.abstract | Ge1-xSnx alloys form a heterogeneous material system with high potential for applications in both optoelectronic and high-speed electronics devices. The attractiveness of Ge1-xSnx lies in the ability to tune the semiconductor band gap and electronic properties as a function of Sn concentration. Advances in Ge1-xSnx material synthesis have raised expectations recently, but there are considerable problems in terms of device demonstration. Although Ge1-xSnx thin films have been previously explored experimentally, in-depth studies of the electrical properties of Ge1-xSnx nanostructures are very limited, specifically those on nanowires grown via a bottom-up vapor–liquid–solid (VLS) process using metal catalysts. In this study, a detailed electrical investigation is presented of nominally undoped Ge1-xSnx bottom-up-grown nanowire devices with different Sn percentages (3–9 at. %). The entire device fabrication process is performed at relatively low temperatures, the maximum temperature being 440 °C. Device current modulation is performed through backgating from a substrate electrode, achieving impressive on–off current (ION/IOFF) ratios of up to 104, showing their potential for electronic and sensor-based applications. Contact resistance (RC) extraction is essential for proper VLS-grown nanowire device electrical evaluation. Once the RC contribution is extracted and removed, parameter values such as mobility can change significantly, by up to 70% in this work. When benchmarked against other Ge1-xSnx electronic devices, the VLS-grown nanowire devices have potential in applications where a high ION/IOFF ratio is important and where thermal budget and processing temperatures are required to be kept to minimum. | en |
| dc.description.status | Peer reviewed | en |
| dc.description.version | Accepted Version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Galluccio, E., Dohert, J., Biswas, S., Holmes, J. D. and Duffy, R. (2020) 'Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge1-xSnx (x = 0.03–0.09) Nanowire Devices', ACS Applied Electronic Materials, 2(5), pp.1226-1234. doi: 10.1021/acsaelm.0c00036 | en |
| dc.identifier.doi | 10.1021/acsaelm.0c00036 | en |
| dc.identifier.endpage | 1234 | en |
| dc.identifier.issn | 2637-6113 | |
| dc.identifier.issued | 5 | en |
| dc.identifier.journaltitle | ACS Applied Electronic Materials | en |
| dc.identifier.startpage | 1226 | en |
| dc.identifier.uri | https://hdl.handle.net/10468/10149 | |
| dc.identifier.volume | 2 | en |
| dc.language.iso | en | en |
| dc.publisher | American Chemical Society | en |
| dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ | en |
| dc.relation.uri | https://pubs.acs.org/doi/abs/10.1021/acsaelm.0c00036 | |
| dc.rights | © 2020 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acsaelm.0c00036 | en |
| dc.subject | Ge1-xSnx | en |
| dc.subject | Nanowires | en |
| dc.subject | Low-temperature processing | en |
| dc.subject | Contact resistance | en |
| dc.subject | Carrier mobility | en |
| dc.subject | Sub-threshold slope | en |
| dc.subject | MOSFETs | en |
| dc.title | Field-effect transistor figures of merit for vapor–liquid–solid-grown Ge1-xSnx (x = 0.03–0.09) nanowire devices | en |
| dc.type | Article (peer-reviewed) | en |
