Enhancing InGaN LED performance via ALD-grown Al2 O3 sidewall passivation

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dc.check.date2026-03-06
dc.contributor.authorBayramlı, H. M.en
dc.contributor.authorGenc, Muhammeten
dc.contributor.authorYücel, O.en
dc.contributor.authorBulut, B.en
dc.contributor.authorBek, A.en
dc.contributor.authorDemirtas, M.en
dc.contributor.funderBursa Uludağ Üniversitesien
dc.date.accessioned2025-04-04T14:25:09Z
dc.date.available2025-04-04T14:25:09Z
dc.date.issued2025en
dc.description.abstractInGaN-based light-emitting diodes (LEDs) are at the forefront of solid-state lighting technologies due to their superior efficiency and broad spectral emission. However, their performance is often compromised by leakage currents, which lead to reduced external quantum efficiency. Passivation of surface defect, the need of which arises from either epitaxial growth or mesa etching, emerges as a promising strategy to mitigate leakage currents and enhance LED performance. This study compares the effects of different sidewall passivation using two dielectric materials, Al2O3 and SiO2, on the reliability and long-term stability performance of InGaN LEDs. The study conducts a comprehensive analysis to evaluate the impact of each material on reducing leakage current and improving overall device efficiency. The experimental findings of our study indicate that the LEDs with Al2O3 sidewall passivation have better long-term stability performance, lower series resistance, higher breakdown voltages, significantly lower leakage current, and up to a 19% increase in light output power compared to SiO2 sidewall passivation. These superior properties of Al2O3-passivated LEDs increase device reliability and stability. Conversely, SiO2-passivated LEDs demonstrate relatively higher leakage currents, which can be attributed to lower dielectric constant, non-uniform film deposition and incomplete defect passivation.en
dc.description.sponsorshipBursa Uludağ University Research (Project grant numbers FGA-2024-1745 and FAY-2024-1777)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid045902en
dc.identifier.citationBayramlı, H.M., Genc, M., Yücel, O., Bulut, B., Bek, A. and Demirtas, M. (2025) ‘Enhancing InGaN LED performance via ALD-grown Al2 O3 sidewall passivation’, Physica Scripta, 100(4), 045902. https://doi.org/10.1088/1402-4896/adb5d0en
dc.identifier.doi10.1088/1402-4896/adb5d0en
dc.identifier.eissn1402-4896en
dc.identifier.issn0031-8949en
dc.identifier.issued4en
dc.identifier.journaltitlePhysica Scriptaen
dc.identifier.urihttps://hdl.handle.net/10468/17238
dc.identifier.volume100en
dc.language.isoenen
dc.publisherInstitute of Physicsen
dc.rights© 2025, IOP Publishing Ltd. All rights, including for text and data mining, AI training,and similar technologies,are reserved. This is an author-created, un-copyedited version of an article accepted for publication/published in Physica Scripta. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1402-4896/adb5d0.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectInGaN LEDsen
dc.subjectLong-term stabilityen
dc.subjectPassivationen
dc.subjectAluminium oxideen
dc.subjectSilicon dioxideen
dc.titleEnhancing InGaN LED performance via ALD-grown Al2 O3 sidewall passivationen
dc.typeArticle (peer-reviewed)en
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