Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

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dc.contributor.authorChou, Hsing-Yi
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorO'Mahony, Aileen
dc.contributor.authorPovey, Ian M.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorDong, L.
dc.contributor.authorYe, P. D.
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, M.
dc.contributor.authorStesmans, A.
dc.contributor.funderFonds Wetenschappelijk Onderzoeken
dc.contributor.funderEuropean Commissionen
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2017-01-26T16:51:42Z
dc.date.available2017-01-26T16:51:42Z
dc.date.issued2016-12-15
dc.date.updated2017-01-26T16:36:45Z
dc.description.abstractSpectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al2O3/metal structures allows one to separate contributions stemming from the internal photoemission (IPE) of electrons into alumina and from the trapping-related displacement currents. IPE spectra suggest that the out-diffusion of In and, possibly, its incorporation in a-Al2O3 lead to the development of ≈0.4 eV wide conduction band (CB) tail states. The top of the InAs valence band is found at 3.45 ± 0.10 eV below the alumina CB bottom, i.e., at the same energy as at the GaAs/a-Al2O3 interface. This corresponds to the CB and the valence band offsets at the InAs/a-Al2O3 interface of 3.1 ± 0.1 eV and 2.5 ± 0.1 eV, respectively. However, atomic-layer deposition of alumina on InAs results in additional low-energy electron transitions with spectral thresholds in the range of 2.0–2.2 eV, which is close to the bandgap of AlAs. The latter suggests the interaction of As with Al, leading to an interlayer containing Al-As bonds providing a lower barrier for electron injection.en
dc.description.sponsorshipFonds Wetenschappelijk Onderzoek—Vlaanderen ((Project No. G.OCO5.13) and by Internal Fund Project No. C14/16/061.)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationChou, H.-Y., O'Connor, E., O'Mahony, A., Povey, I. M., Hurley, P. K., Dong, L., Ye, P. D., Afanas'ev, V. V., Houssa, M. and Stesmans, A. (2016) 'Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3', Journal of Applied Physics, 120(23), pp. 235701. doi:10.1063/1.4971178en
dc.identifier.doi10.1063/1.4971178
dc.identifier.endpage235701-7en
dc.identifier.issn0021-8979
dc.identifier.issued23en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage235701-1en
dc.identifier.urihttps://hdl.handle.net/10468/3528
dc.identifier.volume120en
dc.language.isoenen
dc.publisherAIP Publishing
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/628523/EU/Fast Anneal of Compound semiconductors for Integration of new Technologies/FACITen
dc.rights© 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Appl. Phys. 120, 235701 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4971178en
dc.subjectAluminaen
dc.subjectAluminiumen
dc.subjectAtomic layer depositionen
dc.subjectConduction bandsen
dc.subjectElectron trapsen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectMOS capacitorsen
dc.subjectPhotoelectron spectraen
dc.subjectPhotoelectron conversionen
dc.subjectValence bandsen
dc.titleBand offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3en
dc.typeArticle (peer-reviewed)en
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