A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures

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dc.contributor.authorLin, Jun
dc.contributor.authorWalsh, Lee A.
dc.contributor.authorHughes, Gregory
dc.contributor.authorWoicik, Joseph C.
dc.contributor.authorPovey, Ian M.
dc.contributor.authorO'Regan, Terrance P.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderU.S. Department of Energy
dc.contributor.funderOffice of Science
dc.contributor.funderBasic Energy Sciences
dc.date.accessioned2017-09-20T10:06:32Z
dc.date.available2017-09-20T10:06:32Z
dc.date.issued2014
dc.description.abstractCapacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al2O3/In0.53Ga0.47As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al2O3/In0.53Ga0.47As interface move towards the expected direction as observed from HAXPES measurements. The In0.53Ga0.47As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al2O3/In0.53Ga0.47As interface and suggest an interface state density increasing towards the In0.53Ga0.47As valence band edge. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipBasic Energy Sciences [DE-AC02-98CH10886]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid24104
dc.identifier.citationLin, J., Walsh, L., Hughes, G., Woicik, J. C., Povey, I. M., O'Regan, T. P. and Hurley, P. K. (2014) 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures', Journal of Applied Physics, 116(2), 024104 (8pp). doi: 10.1063/1.4887517en
dc.identifier.doi10.1063/1.4887517
dc.identifier.endpage8
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued2
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4717
dc.identifier.volume116
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4887517
dc.rights© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lin, J., Walsh, L., Hughes, G., Woicik, J. C., Povey, I. M., O'Regan, T. P. and Hurley, P. K. (2014) 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures', Journal of Applied Physics, 116(2), 024104 (8pp). doi: 10.1063/1.4887517 and may be found at http://aip.scitation.org/doi/10.1063/1.4887517en
dc.subjectFermi levelsen
dc.subjectOzoneen
dc.subjectIII-V semiconductorsen
dc.subjectNickelen
dc.subjectCapacitanceen
dc.titleA combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structuresen
dc.typeArticle (peer-reviewed)en
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