Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

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dc.contributor.authorShin, Byungha
dc.contributor.authorWeber, Justin R.
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorVan de Walle, Chris G.
dc.contributor.authorMcIntyre, Paul C.
dc.contributor.funderSemiconductor Research Corporation
dc.contributor.funderIntel Corporation
dc.contributor.funderFulbright Association
dc.date.accessioned2017-07-28T11:22:09Z
dc.date.available2017-07-28T11:22:09Z
dc.date.issued2010
dc.description.abstractWe report experimental and theoretical studies of defects producing fixed charge within Al(2)O(3) layers grown by atomic layer deposition (ALD) on In(0.53)Ga(0.47)As(001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al(2)O(3)/n-In(0.53)Ga(0.47)As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al(2)O(3). We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al(2)O(3). (C) 2010 American Institute of Physics. (doi:10.1063/1.3399776)en
dc.description.sponsorshipSemiconductor Research Corporation (NonClassical CMOS Center Task No. 1437.003 and Grant No. 2009- VJ-1867); Fulbright Association (Irish Fulbright Commission; Fulbright USA)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid152908
dc.identifier.citationShin, B., Weber, J. R., Long, R. D., Hurley, P. K., Walle, C. G. V. d. and McIntyre, P. C. (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates', Applied Physics Letters, 96(15), pp. 152908. doi: 10.1063/1.3399776en
dc.identifier.doi10.1063/1.3399776
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued15
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4343
dc.identifier.volume96
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3399776
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Shin, B., Weber, J. R., Long, R. D., Hurley, P. K., Walle, C. G. V. d. and McIntyre, P. C. (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates', Applied Physics Letters, 96(15), pp. 152908 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3430061en
dc.subjectTotal-energy calculationsen
dc.subjectAugmented-wave methoden
dc.subjectBasis-seten
dc.subjectAl203en
dc.subjectDefectsen
dc.subjectSiliconen
dc.subjectStacksen
dc.subjectFilmsen
dc.subjectAluminium compoundsen
dc.subjectAtomic layer depositionen
dc.subjectCrystal defectsen
dc.subjectDangling bondsen
dc.subjectGallium arsenideen
dc.subjectHydrogenationen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectPassivationen
dc.subjectSubstratesen
dc.subjectOzoneen
dc.subjectPassivationen
dc.subjectThin filmsen
dc.titleOrigin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substratesen
dc.typeArticle (peer-reviewed)en
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