A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

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dc.contributor.authorFaraz, Ahmad
dc.contributor.authorDeepak, Nitin
dc.contributor.authorSchmidt, Michael
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorKeeney, Lynette
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2019-04-03T11:34:25Z
dc.date.available2019-04-03T11:34:25Z
dc.date.issued2015-08-07
dc.date.updated2019-03-26T09:12:32Z
dc.description.abstractThe ability to control the growth, texture and orientation of self-nanostructured lead-free Aurivillius phase thin films can in principle, greatly improve their ferroelectric properties, since in these materials the polarization direction is dependent on crystallite orientation. Here, we report the growth of c-plane oriented Bi6Ti3Fe2O18 (B6TFO) functional oxide Aurivillius phase thin films on c-plane sapphire substrates by liquid injection chemical vapour deposition (LI-CVD). Microstructural analysis reveals that B6TFO thin films annealed at 850°C are highly crystalline, well textured (Lotgering factor of 0.962) and single phase. Typical Aurivillius plate-like morphology with an average film thickness of 110nm and roughness 24nm was observed. The potential of B6TFO for use as a material in lead-free piezoelectric and ferroelectric data storage applications was explored by investigating local electromechanical (piezoelectric) and ferroelectric properties at the nano-scale. Vertical and lateral piezoresponse force microscopy (PFM) reveals stronger in-plane polarization due to the controlled growth of the a-axis oriented grains lying in the plane of the B6TFO films. Switching spectroscopy PFM (SS-PFM) hysteresis loops obtained at higher temperatures (up to 200°C) and at room temperature reveal a clear ferroelectric signature with only minor changes in piezoresponse observed with increasing temperature. Ferroelectric domain patterns were written at 200°C using PFM lithography. Hysteresis loops generated inside the poled regions at room and higher temperatures show a significant increase in piezoresponse due to alignment of the c-axis polarization components under the external electric field. No observable change in written domain patterns was observed after 20hrs of PFM scanning at 200°C, confirming that B6TFO retains polarization over this finite period of time. These studies demonstrate the potential of B6TFO thin films for use in piezoelectric applications at elevated temperatures and for use in non-volatile ferroelectric memory applications.en
dc.description.sponsorshipHigher Education Authority (HEA PRTLI 3, HEA PRTLI4 Project INSPIRE)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid087123en
dc.identifier.citationFaraz, A., Deepak, N., Schmidt, M., Pemble, M. E. and Keeney, L. (2015) 'A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications', AIP Advances, 5(8), 087123 (14 pp). doi: 10.1063/1.4928495en
dc.identifier.doi10.1063/1.4928495en
dc.identifier.eissn2158-3226
dc.identifier.endpage087123-14en
dc.identifier.issued8en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage087123-1en
dc.identifier.urihttps://hdl.handle.net/10468/7699
dc.identifier.volume5en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/290158/EU/NANOELECTROMECHANICAL MOTION IN FUNCTIONAL MATERIALS/NANOMOTIONen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Technology and Innovation Development Award (TIDA)/13/TIDA/I2728/IE/New memory cell test structure devices based on single phase multiferroics/en
dc.relation.urihttp://scitation.aip.org/content/aip/journal/adva/5/8/10.1063/1.4928495
dc.rights© 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.en
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/en
dc.subjectPolarizationen
dc.subjectFerroelectric thin filmsen
dc.subjectAtomic force microscopyen
dc.subjectFerroelectric materialsen
dc.subjectFerroelectric switchingen
dc.titleA study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applicationsen
dc.typeArticle (peer-reviewed)en
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