Rectifiers, MOS diodes and LEDs made of fully porous GaN produced by chemical vapor deposition

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dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorMena, Josue
dc.contributor.authorAixart, J.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.funderMinisterio de Economía, Industria y Competitividad, Gobierno de Españaen
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderInstitució Catalana de Recerca i Estudis Avançatsen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-06-14T15:16:44Z
dc.date.available2018-06-14T15:16:44Z
dc.date.issued2017-09
dc.date.updated2018-06-11T21:05:41Z
dc.description.abstractHere we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (CVD) and reviewed the work done that allowed demonstrating p-n junction rectifiers and MOS diodes in a simple manner and without involving post-growth steps to induce porosity. p-n junction rectifiers exhibited stable rectification in the range ±1–±5 V, with very stable values of current with time. MOS diodes were fabricated in a single growth step formed by a MgO dielectric interlayer in between Mg-doped porous GaN and a Mg-Ga metallic alloy. Despite the high resistivity observed in the LEDs fabricated, that induced a turn on voltage of ∼13 V, the emission consisted only in one peak centered at 542 nm. Our porous GaN films exhibit random porosity when compared to arrays of nanostructures, however, their easy deposition over large areas without dominating leakage currents is promising for wideband gap applications.en
dc.description.sponsorshipMinisterio de Economía, Industria y Competitividad, Gobierno de España (Spanish Government under projects TEC2014-55948-R and Mineco/AEI/FEDER MAT2016-75716-C2-1-R); Generalitat de Catalunya (Catalan Authority under project 2014SGR1358); Institució Catalana de Recerca i Estudis Avançats (ICREA Academia awards 2010ICREA-02)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCarvajal, J. J., Mena, J., Aixart, J., O'Dwyer, C., Díaz, F. and Aguiló, M. (2017) 'Rectifiers, MOS Diodes and LEDs Made of Fully Porous GaN Produced by Chemical Vapor Deposition', ECS Journal of Solid State Science and Technology, 6(10), pp. R143-R148. doi: 10.1149/2.0041710jssen
dc.identifier.doi10.1149/2.0041710jss
dc.identifier.endpageR148en
dc.identifier.issn2162-8769
dc.identifier.journaltitleECS Journal of Solid State Science and Technologyen
dc.identifier.startpageR143en
dc.identifier.urihttps://hdl.handle.net/10468/6307
dc.identifier.volume6en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Technology and Innovation Development Award (TIDA)/15/TIDA/2893/IE/Advanced Battery Materials for High Volumetric Energy Density Li-ion Batteries for Remote Off-Grid Power/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2581/IE/Diffractive optics and photonic probes for efficient mouldable 3D printed battery skin materials for portable electronic devices/en
dc.relation.urihttp://jss.ecsdl.org/content/6/10/R143.abstract
dc.rights© 2017 The Electrochemical Societyen
dc.subjectChemical vapor depositionen
dc.subjectChemical vapor depositions (CVD)en
dc.subjectDielectric interlayersen
dc.subjectGrowth stepsen
dc.subjectHigh resistivityen
dc.subjectMetallic alloysen
dc.subjectP-n junctionen
dc.subjectTurn-on voltagesen
dc.subjectWide band gapen
dc.subjectBinary alloysen
dc.subjectDepositionen
dc.subjectDiodesen
dc.subjectElectric rectifiersen
dc.subjectGallium alloysen
dc.subjectGallium compoundsen
dc.subjectGallium nitrideen
dc.subjectLeakage currentsen
dc.subjectLight emitting diodesen
dc.subjectMagnesium alloysen
dc.subjectMagnesium compoundsen
dc.subjectPorosityen
dc.subjectSemiconductor junctionsen
dc.subjectVapor depositionen
dc.titleRectifiers, MOS diodes and LEDs made of fully porous GaN produced by chemical vapor depositionen
dc.typeArticle (peer-reviewed)en
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