Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes

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dc.contributor.authorJackson, Jennifer C.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorLane, Bill
dc.contributor.authorMathewson, Alan
dc.contributor.authorMorrison, Alan P.
dc.date.accessioned2017-07-28T13:29:55Z
dc.date.available2017-07-28T13:29:55Z
dc.date.issued2002
dc.description.abstractThis letter presents an experimental study of dark count rates and leakage current in Geiger-mode avalanche photodiodes (GM APD). Experimental results from circular diodes over a range of areas (20-500 mum diam), exhibit leakage current levels orders of magnitude higher than anticipated from dark count rates. Measurements of the area and peripheral components of the leakage current indicate that the majority of the current in reverse bias does not enter the high-field region of the diode, and therefore, does not contribute to the dark count rate. Extraction of the area leakage current term from large-area devices (500 mum) corresponds well with the measured dark count rates on smaller devices (20 mum). Finally, the work indicates how dark count measurements represent 10(-18) A levels of leakage current detection in GM APDs. (C) 2002 American Institute of Physics. (DOI: 10.1063/1.1483119)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationJackson, J. C., Hurley, P. K., Lane, B., Mathewson, A. and Morrison, A. P. (2002) 'Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes', Applied Physics Letters, 80(22), pp. 4100-4102. doi: 10.1063/1.1483119en
dc.identifier.doi10.1063/1.1483119
dc.identifier.endpage4102
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued22
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage4100
dc.identifier.urihttps://hdl.handle.net/10468/4405
dc.identifier.volume80
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1483119
dc.rights© 2002 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Jackson, J. C., Hurley, P. K., Lane, B., Mathewson, A. and Morrison, A. P. (2002) 'Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes', Applied Physics Letters, 80(22), pp. 4100-4102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1483119en
dc.subjectAccurate extractionen
dc.subjectJunctionen
dc.subjectLeakage currentsen
dc.subjectAvalanche photodiodesen
dc.subjectElectric measurementsen
dc.titleComparing leakage currents and dark count rates in Geiger-mode avalanche photodiodesen
dc.typeArticle (peer-reviewed)en
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