Built-in field reduction in InGaN/GaN quantum dot molecules

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dc.contributor.authorSchulz, Stefan
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T10:48:30Z
dc.date.available2017-07-28T10:48:30Z
dc.date.issued2011
dc.description.abstractWe use a tight-binding model to study the electronic structure of InGaN/GaN quantum dot molecules grown along the c-axis. This analysis is carried out as a function of the barrier thickness between the two non-identical dots. Our results show that the built-in field is effectively reduced in systems of coupled nitride quantum dots, leading to an increased spatial overlap of electron and hole wave functions compared to an isolated dot. This finding is in agreement with experimental data reported in the literature and is directly related to the behavior of the built-in potential outside an isolated dot. (C) 2011 American Institute of Physics. (doi:10.1063/1.3665069)en
dc.description.sponsorshipScience Foundation Irelanden
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid223106
dc.identifier.citationSchulz, S. and O’Reilly, E. P. (2011) 'Built-in field reduction in InGaN/GaN quantum dot molecules', Applied Physics Letters, 99(22), pp. 223106. doi: 10.1063/1.3665069en
dc.identifier.doi10.1063/1.3665069
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued22
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4310
dc.identifier.volume99
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3665069
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Schulz, S. and O’Reilly, E. P. (2011) 'Built-in field reduction in InGaN/GaN quantum dot molecules', Applied Physics Letters, 99(22), pp. 223106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3665069en
dc.subjectOptical-propertiesen
dc.subjectSemiconductorsen
dc.subjectDiodesen
dc.subjectGallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectSemiconductor quantum dotsen
dc.subjectTight-binding calculationsen
dc.subjectWide band gap semiconductorsen
dc.subjectQuantum dotsen
dc.subjectQuantum wellsen
dc.subjectElectronic structureen
dc.subjectWave functionsen
dc.titleBuilt-in field reduction in InGaN/GaN quantum dot moleculesen
dc.typeArticle (peer-reviewed)en
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