Bipolar effects in unipolar junctionless transistors

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dc.contributor.authorParihar, Mukta Singh
dc.contributor.authorGhosh, Dipankar
dc.contributor.authorArmstrong, G. Alastair
dc.contributor.authorYu, Ran
dc.contributor.authorRazavi, Pedram
dc.contributor.authorKranti, Abhinav
dc.contributor.funderGovernment of India
dc.date.accessioned2017-07-28T09:23:24Z
dc.date.available2017-07-28T09:23:24Z
dc.date.issued2012
dc.description.abstractIn this work, we analyze hysteresis and bipolar effects in unipolar junctionless transistors. A change in subthreshold drain current by 5 orders of magnitude is demonstrated at a drain voltage of 2.25 V in silicon junctionless transistor. Contrary to the conventional theory, increasing gate oxide thickness results in (i) a reduction of subthreshold slope (S-slope) and (ii) an increase in drain current, due to bipolar effects. The high sensitivity to film thickness in junctionless devices will be most crucial factor in achieving steep transition from ON to OFF state. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4748909)en
dc.description.sponsorshipGovernment of India (Science and Engineering Research Council, Department of Science and Technology (SR/S3/EECS/0130/2011))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid93507
dc.identifier.citationParihar, M. S., Ghosh, D., Armstrong, G. A., Yu, R., Razavi, P. and Kranti, A. (2012) 'Bipolar effects in unipolar junctionless transistors', Applied Physics Letters, 101(9), pp. 093507. doi: 10.1063/1.4748909en
dc.identifier.doi10.1063/1.4748909
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued9
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4296
dc.identifier.volume101
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4748909
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Parihar, M. S., Ghosh, D., Armstrong, G. A., Yu, R., Razavi, P. and Kranti, A. (2012) 'Bipolar effects in unipolar junctionless transistors', Applied Physics Letters, 101(9), pp. 093507 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4748909en
dc.subjectSoi transistorsen
dc.subjectSiliconen
dc.subjectMosfetsen
dc.subjectIonizationen
dc.subjectMOSFETsen
dc.subjectElectronsen
dc.subjectCarrier generationen
dc.subjectSiliconen
dc.titleBipolar effects in unipolar junctionless transistorsen
dc.typeArticle (peer-reviewed)en
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