Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists

dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorMcCarthy, Brendan
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorDjara, Vladimir
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-08-03T14:42:04Z
dc.date.available2018-08-03T14:42:04Z
dc.date.issued2014-08
dc.date.updated2018-08-02T19:11:43Z
dc.description.abstractAs transistor dimensions continue to diminish, techniques for fabrication need to be adapted. In particular, crystal recovery post ion implantation is required due to destructive ion bombardment inducing crystal damage including amorphization. Here, we report a study on the post-implant recrystallization in germanium (Ge) nanowires (NWs) following gallium (Ga) ion doping. In this work a variation of NW diameters and orientations were irradiated and annealed in situ to investigate the mechanism of recrystallization. An added complication of misorientation of crystal grains increases the complexity of crystal recovery for suspended NWs. We show that when the misorientation is prevented, by leaving a crystal link between two seeds and providing a rigid support, recrystallization occurs primarily via solid phase epitaxial growth (SPEG). Finally, we demonstrate that top-down fabricated Ge NWs on insulator can be recovered with no extended defects. This work highlights both experimentally and through molecular dynamic simulations the importance of engineering crystal recovery in Ge NWs which may have potential for next-generation complementary metal-oxide semiconductor (CMOS) devices.en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGangnaik, A., Georgiev, Y. M., McCarthy, B., Petkov, N., Djara, V. and Holmes, J. D. (2014) 'Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists', Microelectronic Engineering, 123, pp. 126-130. doi: 10.1016/j.mee.2014.06.013en
dc.identifier.doi10.1016/j.mee.2014.06.013
dc.identifier.endpage130en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage126en
dc.identifier.urihttps://hdl.handle.net/10468/6578
dc.identifier.volume123en
dc.language.isoenen
dc.publisherElsevieren
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2602/IE/Novel Nanowire Structures for Devices/en
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S0167931714002652
dc.rights© 2014 Elsevier B.V. All rights reserved. This submitted manuscript version is made available under the CC-BY-NC-ND 4.0 license.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectElectron beam lithographyen
dc.subjectLift-offen
dc.subjectNanolithographyen
dc.subjectPlasma etchingen
dc.subjectSLM resisten
dc.subjectDry etchingen
dc.subjectElectron beam lithographyen
dc.subjectNanolithographyen
dc.subjectPlasma etchingen
dc.subjectNanolithographyen
dc.subjectPlasma etchingen
dc.subjectBaking temperatureen
dc.subjectFundamental patternsen
dc.subjectPattern transfersen
dc.subjectPositive resistsen
dc.subjectProcessing parametersen
dc.subjectSLM resisten
dc.subjectVery high resolutionen
dc.subjectPolymethyl methacrylatesen
dc.subjectElectron beam lithographyen
dc.titleCharacterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resistsen
dc.typeArticle (peer-reviewed)en
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