Role of scandium precursor decomposition in MOCVD of AlScN and predictions for AlYN

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dc.contributor.authorStreicher, Isabel
dc.contributor.authorMuriqi, Arbresha
dc.contributor.authorMullins, Rita
dc.contributor.authorStraňák, Patrik
dc.contributor.authorPrescher, Mario
dc.contributor.authorKapitein, Manuel
dc.contributor.authorKirste, Lutz
dc.contributor.authorQuay, Rüdiger
dc.contributor.authorNolan, Michael
dc.contributor.authorLeone, Stefano
dc.contributor.funderBundesministerium für Forschung, Technologie und Raumfahrt
dc.date.accessioned2026-09-04T15:02:01Z
dc.date.available2026-09-04T15:02:01Z
dc.date.issued2026-07-08
dc.description© 2026, the Author(s). Published by the Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution 4.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.
dc.description.abstractWurtzite Al1−xScxN is a novel nitride that attracts attention for its piezoelectric and ferroelectric properties, and further offers the possibility to grow strain-free AlScN/GaN heterostructures due to an a lattice parameter matching with GaN. Growth of AlScN by metal–organic chemical vapor deposition is challenging because of the low vapor pressure of commercially available Sc precursors and a high amount of carbon atoms present in these precursors, that can incorporate into the films. In this work, precursor decomposition and ligand loss of the novel Sc precursors (EtCp)2Sc(bdma) and (EtCp)2Sc(dtbt) are studied by density functional theory and related to experimental results. It is found that low temperatures, low pressures, and low NH3 flows promote carbon incorporation and lead to grey coloration of AlScN films grown with (EtCp)2Sc(bdma), probably due to the high residual mass of this precursor. At 1100 °C, high quality 2DEGs can be grown, especially with (EtCp)2Sc(dtbt). Predictions for the growth of AlYN/GaN heterostructures are made.en
dc.description.sponsorshipBundesministerium für Forschung, Technologie und Raumfahrt|03XP0387B
dc.format.extent10
dc.format.extent3295088
dc.format.extent178831
dc.identifier.authororcidStreicher, Isabel
dc.identifier.authororcidMuriqi, Arbresha
dc.identifier.authororcidMullins, Rita
dc.identifier.authororcidStraňák, Patrik
dc.identifier.authororcidPrescher, Mario
dc.identifier.authororcidKapitein, Manuel
dc.identifier.authororcidKirste, Lutz
dc.identifier.authororcidQuay, Rüdiger
dc.identifier.authororcidNolan, Michael§0000-0002-5224-8580
dc.identifier.authororcidLeone, Stefano
dc.identifier.citationStreicher, I, Muriqi, A, Mullins, R, Straňák, P, Prescher, M, Kapitein, M, Kirste, L, Quay, R, Nolan, M & Leone, S 2026, 'Role of scandium precursor decomposition in MOCVD of AlScN and predictions for AlYN', Materials Advances, vol. 7, no. 16, pp. 8439-8448. https://doi.org/10.1039/d6ma00563b
dc.identifier.doi10.1039/d6ma00563b
dc.identifier.endpage8448
dc.identifier.issn2633-5409
dc.identifier.issued16
dc.identifier.journaltitleMaterials Advances
dc.identifier.startpage8439
dc.identifier.urihttps://hdl.handle.net/10468/19175
dc.identifier.urlhttps://www.scopus.com/pages/publications/105046192752
dc.identifier.volume7
dc.language.isoeng
dc.rightscc_by
dc.rightscc_by
dc.subjectScandium precursor decomposition
dc.subjectNitride materials
dc.subjectHeterostructures
dc.subjectSemiconductor devices
dc.subjectMOCVD
dc.subject[TyndallMicroNano]
dc.subjectChemistry (miscellaneous)
dc.subjectGeneral Materials Science
dc.titleRole of scandium precursor decomposition in MOCVD of AlScN and predictions for AlYNen
dc.typeArticle (Peer reviewed)
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