Ultra-high negative infrared photoconductance in highly As-doped germanium nanowires induced by hot electron trapping

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dc.contributor.authorJohn, John Wellington
dc.contributor.authorDhyani, Veerendra
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorDas, Amit K.
dc.contributor.authorRay, Samit K.
dc.contributor.authorDas, Samaresh
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderScience and Engineering Research Boarden
dc.date.accessioned2020-09-04T15:23:29Z
dc.date.available2020-09-04T15:23:29Z
dc.date.issued2020-06-30
dc.date.updated2020-08-24T16:08:23Z
dc.description.abstractHere, we report the observation of negative photoconductance (NPC) effect in highly arsenic-doped germanium nanowires (Ge NWs) for the infrared light. NPC was studied by light-assisted Kelvin probe force microscopy, which shows the depletion of carriers in n-Ge NWs in the presence of infrared light. The trapping of photocarriers leads to high recombination of carriers in the presence of light, which is dominant in the n-type devices. Furthermore, a carrier trapping model was used to investigate the trapping and detrapping phenomena and it was observed that the NPC in n-Ge occurred, because of the fast trapping of mobile charge carriers by interfacial states. The performance of n-type devices was compared with p-type NW detectors, which shows the conventional positive photoconductive behavior with high gain of 104. The observed results can be used to study the application of Ge NWs for various optoelectronic applications involving light tunable memory device applications.en
dc.description.sponsorshipScience and Engineering Research Board-Department of Science and Technology (SERB-DST), India (IMPacting Research Innovation and Technology (IMPRINT))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationJohn, J. W., Dhyani, V., Georgiev, Y. M., Gangnaik, A. S., Biswas, S., Holmes, J. D., Das, A. K., Ray, S. K. and Das, S. (2020) 'Ultrahigh Negative Infrared Photoconductance in Highly As-Doped Germanium Nanowires Induced by Hot Electron Trapping', ACS Applied Electronic Materials, 2(7), pp. 1934-1942. doi: 10.1021/acsaelm.0c00245en
dc.identifier.doi10.1021/acsaelm.0c00245en
dc.identifier.endpage1942en
dc.identifier.issn2637-6113
dc.identifier.issued7en
dc.identifier.journaltitleAcs Applied Electronic Materialsen
dc.identifier.startpage1934en
dc.identifier.urihttps://hdl.handle.net/10468/10476
dc.identifier.volume2en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.urihttps://pubs.acs.org/doi/full/10.1021/acsaelm.0c00245
dc.rights© 2020 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/full/10.1021/acsaelm.0c00245en
dc.subjectNegative photoconductivityen
dc.subjectInfrared detectionen
dc.subjectHot electron trappingen
dc.subjectGermanium nanowireen
dc.subjectDiameter-dependent photoconductanceen
dc.titleUltra-high negative infrared photoconductance in highly As-doped germanium nanowires induced by hot electron trappingen
dc.title.alternativeDhyani, Veerendra Georgiev, Yordan M. Gangnaik, Anushka S. Biswas, Subhajit Holmes, Justin D. Das, Amit K. Ray, Samit K. Das, Samareshen
dc.typeArticle (peer-reviewed)en
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