Characterization of a low-cost, monolithically integrated, tunable 10G transmitter for wavelength agile PONs

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dc.contributor.authorCarey, Daniel
dc.contributor.authorRamaswamy, Prasanna
dc.contributor.authorTalli, Giuseppe
dc.contributor.authorAntony, Cleitus
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorCorbett, Brian M.
dc.contributor.authorTownsend, Paul D.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2018-11-23T16:33:35Z
dc.date.available2018-11-23T16:33:35Z
dc.date.issued2018-12
dc.date.updated2018-11-23T16:26:47Z
dc.description.abstractDynamically reconfigurable passive optical networks (PONs) using time-division multiplexing and dense wavelength division multiplexing will require low-cost, high-performance customer premises equipment to be economically viable. In particular, substantial cost savings can be achieved through the use of efficient re-growth free, foundry-compatible fabrication techniques. Using this strategy, this paper presents the first detailed characterization of a monolithically integrated transmitter comprised of a discretely tunable slotted Fabry–Pérot ridge waveguide laser, an absorptive modulator and a semiconductor optical amplifier (SOA) produced using a standard off-the-shelf AlInGaAs/InP multiple quantum well epitaxial structure. This first generation device demonstrates a discrete single-mode tuning range of approximately 12 nm between 1551nm and 1563 nm with a side-mode suppression ratio ≥30 dB. Moreover, the integrated modulator section is shown to support transmission at 10 Gb/s using non-return to zero on-off keying with an extinction ratio in excess of 8 dB. Furthermore, using a time-resolved chirp measurement technique to examine dynamic deviations in the set carrier frequency, the modulator section exhibits a chirp contribution of <6 GHz using test patterns with high and low frequency content. In addition, the generation of optical bursts through the application of a gating function to the SOA section was found to shift the unmodulated carrier of a typical lasing mode by ≤8 GHz for gating periods comparable with a typical PON burst durations of 125 μs which are faster than the thermal response time of the transmitter material.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCarey, D., Ramaswamy, P., Talli, G., Antony, C., Roycroft, B., Corbett, B. and Townsend, P. D. (2018) 'Characterization of a Low-Cost, Monolithically Integrated, Tunable 10G Transmitter for Wavelength Agile PONs', IEEE Journal of Quantum Electronics, 54(6), pp. 1-12. doi: 10.1109/JQE.2018.2874628en
dc.identifier.doi10.1109/JQE.2018.2874628
dc.identifier.endpage12en
dc.identifier.issn0018-9197
dc.identifier.issued6en
dc.identifier.journaltitleIEEE Journal of Quantum Electronicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/7143
dc.identifier.volume54en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/12/IA/1270/IE/Next Generation Photonic Access and Data Communication Systems/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/318137/EU/The DIStributed Core for unlimited bandwidth supply for all Users and Services/DISCUSen
dc.relation.urihttps://ieeexplore.ieee.org/document/8487016
dc.rights© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectOptical transmittersen
dc.subjectModulationen
dc.subjectSemiconductor optical amplifiersen
dc.subjectTuningen
dc.subjectVertical cavity surface emitting lasersen
dc.subjectFabricationen
dc.subjectWaveguide lasersen
dc.subjectOptical communicationsen
dc.subjectDense wavelength division multiplexingen
dc.subjectTime division multiplexingen
dc.subjectPassive optical networksen
dc.subjectTunable semiconductor lasersen
dc.subjectMonolithic integrationen
dc.titleCharacterization of a low-cost, monolithically integrated, tunable 10G transmitter for wavelength agile PONsen
dc.typeArticle (peer-reviewed)en
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