Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

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dc.contributor.authorSchulz, Stefan
dc.contributor.authorCaro, Miguel A.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T09:23:24Z
dc.date.available2017-07-28T09:23:24Z
dc.date.issued2012
dc.description.abstractWe present a detailed analysis of the electrostatic built-in field, the electronic structure, and the optical properties of a-plane GaN/AlN quantum dots with an arrowhead-shaped geometry. This geometry is based on extensive experimental analysis given in the literature. Our results indicate that the spatial overlap of electron and hole ground state wave functions is significantly increased, compared to that of a c-plane system, when taking the experimentally suggested trapezoid-shaped dot base into account. This finding is in agreement with experimental data on the optical properties of a-plane GaN/AlN quantum dots. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4752108)en
dc.description.sponsorshipScience Foundation Ireland (10/IN.1/I2994)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid113107
dc.identifier.citationSchulz, S., Caro, M. A. and O'Reilly, E. P. (2012) 'Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots', Applied Physics Letters, 101(11), pp. 113107. doi: 10.1063/1.4752108en
dc.identifier.doi10.1063/1.4752108
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued11
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4294
dc.identifier.volume101
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4752108
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Schulz, S., Caro, M. A. and O'Reilly, E. P. (2012) 'Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots', Applied Physics Letters, 101(11), pp. 113107 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4752108en
dc.subjectFieldsen
dc.subjectQuantum dotsen
dc.subjectWave functionsen
dc.subjectOptical propertiesen
dc.subjectGround statesen
dc.subjectSpatial analysisen
dc.titlePrediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dotsen
dc.typeArticle (peer-reviewed)en
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