GaN-based resonant cavity LEDs fabricated by photo-electrochemical etching and micro-transfer printing

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dc.contributor.authorChen, Huanqing
dc.contributor.authorLi, Zhi
dc.contributor.authorLei, Menglai
dc.contributor.authorGenc, Muhammet
dc.contributor.authorMeng, Linghai
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorChen, Weihua
dc.contributor.authorHu, Xiaodong
dc.contributor.authorCorbett, Brian
dc.contributor.funderNational Key Research and Development Program of China
dc.contributor.funderTaighde Éireann - Research Ireland
dc.date.accessioned2026-05-06T13:50:01Z
dc.date.available2026-05-06T13:50:01Z
dc.date.issued2026-04-30
dc.description.abstractResonant cavity LEDs (RCLEDs) exhibit excellent temporal and spatial coherence with narrow spectral linewidth and small divergence angle, which is of great importance for micro-displays. In this paper, we demonstrate a novel method to create GaN-based RCLEDs by using photo-electrochemical etching and micro-transfer printing (MTP) technology. Through systematic optimizing of the etching conditions, highly selective etching of an InGaN multiple quantum well sacrificial layer is achieved with parasitic etching of adjacent layers being completely suppressed. The roughness of the underside of the exfoliated GaN film is only 3.3 nm. Raman spectroscopy shows that the residual stress in the released material is reduced from 0.74 GPa for the as-grown sample to −0.15 GPa. Using the MTP method, GaN coupons with a deposited upper dielectric mirror were transferred onto target substrates covered with either an Al mirror or dielectric distributed Bragg reflector to form two types of blue RCLEDs. The electroluminescence spectra of the two RCLEDs show a much narrower linewidth, reduced from 32 nm in the conventional LED to ∼5 nm, together with stable peak wavelength with increasing current density, with the shift reduced from 9.3 nm to less than 1 nm. The far-field pattern is influenced by the bottom mirror, and the far-field divergence angle can be decreased to only 52° by matching the cavity and the quantum well exciton modes. This scalable approach is highly promising for the realization of compact resonant cavity devices and their use in displays and in communications.en
dc.description.sponsorshipThis work was supported by the National Key Research and Development Program of China (Grant No. 2023YFB4604400), Research Ireland Pathway Program (SFI-IRC_22/PATH-S/10800) and Irish Photonics Integration Centre (IPIC) (SFI-12/RC/2276_P2_IPIC)
dc.description.versionPublished Version
dc.format.extent8
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid115297
dc.identifier.authororcidChen, Huanqing
dc.identifier.authororcidLi, Zhi§0000-0002-0417-832X
dc.identifier.authororcidLei, Menglai
dc.identifier.authororcidGenc, Muhammet
dc.identifier.authororcidMeng, Linghai
dc.identifier.authororcidRoycroft, Brendan
dc.identifier.authororcidChen, Weihua
dc.identifier.authororcidHu, Xiaodong
dc.identifier.authororcidCorbett, Brian§0000-0002-9002-8212
dc.identifier.citationChen, H, Li, Z, Lei, M, Genc, M, Meng, L, Roycroft, B, Chen, W, Hu, X & Corbett, B 2026, 'GaN-based resonant cavity LEDs fabricated by photo-electrochemical etching and micro-transfer printing', Optics and Laser Technology, vol. 202, 115297, pp. 1-8. https://doi.org/10.1016/j.optlastec.2026.115297
dc.identifier.doi10.1016/j.optlastec.2026.115297
dc.identifier.endpage8
dc.identifier.issn0030-3992
dc.identifier.journaltitleOptics and Laser Technology
dc.identifier.othercrossref: 10.1016/j.optlastec.2026.115297
dc.identifier.otherORCID: /0000-0002-0417-832X/work/213926376
dc.identifier.otherORCID: /0000-0002-9002-8212/work/213926652
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/18727
dc.identifier.volume202
dc.language.isoen
dc.publisherElsevier Ltd
dc.relation.urihttps://www.scopus.com/pages/publications/105037378284
dc.relation.urihttps://linkinghub.elsevier.com/retrieve/pii/S0030399226006481
dc.rights© 2026, the Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license ( http://creativecommons.org/licenses/by/4.0/ ).
dc.rights.accessrightsopen access
dc.rights.licensenameAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.statusPeer reviewed
dc.subjectFar-field divergence angle
dc.subjectMicro-transfer printing
dc.subjectPhoto-electrochemical etching
dc.subjectResonant cavity LED
dc.subjectStress relaxation
dc.subject[Tyndall]
dc.titleGaN-based resonant cavity LEDs fabricated by photo-electrochemical etching and micro-transfer printingen
dc.typeArticle (peer-reviewed)
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