Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

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dc.contributor.authorDimastrodonato, Valeria
dc.contributor.authorMereni, Lorenzo O.
dc.contributor.authorJuska, Gediminas
dc.contributor.authorPelucchi, Emanuele
dc.contributor.funderHigher Education Authority
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:04:42Z
dc.date.available2017-07-28T11:04:42Z
dc.date.issued2010
dc.description.abstractWe report on some surprising optical properties of diluted nitride InGaAs(1-epsilon)N(epsilon)/GaAs (epsilon << 1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots. (C) 2010 American Institute of Physics. (doi:10.1063/1.3481675)en
dc.description.sponsorshipHigher Education Authority (Program for Research in Third Level Institutions 2007–2011 via the INSPIRE program); Science Foundation Ireland ( Grant Nos. 05/IN.1/I25 and 08/RFP/MTR1659)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid72115
dc.identifier.citationDimastrodonato, V., Mereni, L. O., Juska, G. and Pelucchi, E. (2010) 'Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy', Applied Physics Letters, 97(7), pp. 072115. doi: 10.1063/1.3481675en
dc.identifier.doi10.1063/1.3481675
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued7
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4335
dc.identifier.volume97
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3481675
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dimastrodonato, V., Mereni, L. O., Juska, G. and Pelucchi, E. (2010) 'Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy', Applied Physics Letters, 97(7), pp. 072115 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3481675en
dc.subjectInverted pyramidsen
dc.subjectLight-emissionen
dc.subjectMu-men
dc.subjectGainnasen
dc.subjectGaasen
dc.subjectNanostructuresen
dc.subjectAlloysen
dc.subjectEnergyen
dc.subjectBiexcitonsen
dc.subjectFine structureen
dc.subjectGallium arsenideen
dc.subjectGallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectMOCVDen
dc.subjectPhotoluminescenceen
dc.subjectSemiconductor dopingen
dc.subjectSemiconductor growthen
dc.subjectSemiconductor quantum dotsen
dc.subjectVapour phase epitaxial growthen
dc.subjectExcitonsen
dc.subjectMetalorganic vapor phase epitaxyen
dc.subjectEmission spectraen
dc.subjectQuantum dotsen
dc.titleImpact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxyen
dc.typeArticle (peer-reviewed)en
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