Thermal stability of crystallographic planes of GaN nanocolumns and their overgrowth by metal organic vapor phase epitaxy

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dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorPampili, Pietro
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2021-03-09T16:55:12Z
dc.date.available2021-03-09T16:55:12Z
dc.date.issued2020-05-22
dc.date.updated2021-03-05T13:37:54Z
dc.description.abstractThermal annealing of top−down fabricated GaN nanocolumns (NCs) was investigated over a wide range of temperatures for ammonia-rich atmospheres of both nitrogen and hydrogen. It was found that in contrast to the annealing of planar GaN layers, where surface morphology change is governed purely by material decomposition, reshaping of GaN NCs is strongly affected by competition between different crystallographic facets, which in turn depends on ambient atmosphere and temperature. A qualitative mechanism explaining the observed behavior has been proposed. On the basis of the analysis of these annealing results, growth conditions suitable for either predominantly lateral expansion of the NCs turning their sidewalls into six well-defined vertical m-plane facets, or, vice versa, their infilling from the base regions between the NCs were determined. GaN NC arrays of increased filling factors as compared to the as top−down fabricated ones have been demonstrated using these optimized growth conditions.en
dc.description.sponsorshipIrish Higher Education Authority (HEA Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects; Science Foundation Ireland ((through IPIC-2 and Grant Nos. SFI-13/US/I2860 and SFI-18/TIDA/ 6066), from Tyndall National Institute (Internal Catalyst Award R18152))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZubialevich, V. Z., Pampili, P. and Parbrook, P. J. (2020) 'Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy', Crystal Growth & Design, 20(6), pp. 3686-3700. doi: 10.1021/acs.cgd.9b01656en
dc.identifier.doi10.1021/acs.cgd.9b01656en
dc.identifier.endpage3700en
dc.identifier.issn1528-7483
dc.identifier.issued6en
dc.identifier.journaltitleCrystal Growth & Designen
dc.identifier.startpage3686en
dc.identifier.urihttps://hdl.handle.net/10468/11128
dc.identifier.volume20en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.isreplacedbyhttps://pubs.acs.org/doi/10.1021/acs.cgd.9b01656
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Crystal Growth & Design, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.cgd.9b01656en
dc.subjectMetallorganic vapor phase epitaxyen
dc.subjectAmbient atmosphereen
dc.subjectCrystallographic facetsen
dc.subjectCrystallographic planeen
dc.subjectGrowth conditionsen
dc.subjectLateral expansionen
dc.subjectMaterial decompositionen
dc.subjectMetal-organic vapor phase epitaxyen
dc.subjectThermal-annealingen
dc.titleThermal stability of crystallographic planes of GaN nanocolumns and their overgrowth by metal organic vapor phase epitaxyen
dc.typeArticle (peer-reviewed)en
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