Thermionic emission perpendicular to bulk and multiquantum AlxGa1-xInP barriers

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dc.contributor.authorNí Chróinín, J. N.
dc.contributor.authorMorrison, Alan P.
dc.date.accessioned2017-07-28T13:20:07Z
dc.date.available2017-07-28T13:20:07Z
dc.date.issued2006
dc.description.abstractA study on thermally activated currents across the bulk and multiquantum barrier (MQB) AlxGa1-xInP/GaInP has been carried out and compared to experimental results from a series of n-i-n diodes over a range of temperatures. By considering the true quantum mechanical nature of the barriers, in contrast to the classical Richardson formalism, it is found that the alloy crossover strongly affects the transport properties of the material. The measured prefactor is found to decrease as Al content is increased. When applied to the MQB structures, the existing model fails to capture the experimental results. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2181648)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid142110
dc.identifier.citationChróinín, J. N. and Morrison, A. P. (2006) 'Thermionic emission perpendicular to bulk and multiquantum AlxGa1−xInP barriers', Applied Physics Letters, 88(14), pp. 142110. doi: 10.1063/1.2181648en
dc.identifier.doi10.1063/1.2181648
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued14
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4389
dc.identifier.volume88
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2181648
dc.rights© 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chróinín, J. N. and Morrison, A. P. (2006) 'Thermionic emission perpendicular to bulk and multiquantum AlxGa1−xInP barriers', Applied Physics Letters, 88(14), pp. 142110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2181648en
dc.subjectLaser-diodesen
dc.subjectTransporten
dc.subjectAlgainpen
dc.subjectAluminiumen
dc.subjectConduction bandsen
dc.subjectEffective massen
dc.subjectIII-V semiconductorsen
dc.subjectActivation energiesen
dc.titleThermionic emission perpendicular to bulk and multiquantum AlxGa1-xInP barriersen
dc.typeArticle (peer-reviewed)en
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