Photonic crystal thin films of GaAs prepared by atomic layer deposition

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dc.contributor.authorPovey, Ian M.
dc.contributor.authorWhitehead, D. E.
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorBardosova, Maria
dc.contributor.authorRenard, J.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T13:20:07Z
dc.date.available2017-07-28T13:20:07Z
dc.date.issued2006
dc.description.abstractPhotonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2345359)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid104103
dc.identifier.citationPovey, I. M., Whitehead, D., Thomas, K., Pemble, M. E., Bardosova, M. and Renard, J. (2006) 'Photonic crystal thin films of GaAs prepared by atomic layer deposition', Applied Physics Letters, 89(10), pp. 104103. doi: 10.1063/1.2345359en
dc.identifier.doi10.1063/1.2345359
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued10
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4385
dc.identifier.volume89
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2345359
dc.rights© 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Povey, I. M., Whitehead, D., Thomas, K., Pemble, M. E., Bardosova, M. and Renard, J. (2006) 'Photonic crystal thin films of GaAs prepared by atomic layer deposition', Applied Physics Letters, 89(10), pp. 104103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2345359en
dc.subjectInverse opalsen
dc.subjectGrowthen
dc.subjectBandgapen
dc.subjectInpen
dc.subjectOpalen
dc.subjectAtomic layer depositionen
dc.subjectOptical materialsen
dc.subjectPhotonic crystalsen
dc.subjectPhotonicsen
dc.titlePhotonic crystal thin films of GaAs prepared by atomic layer depositionen
dc.typeArticle (peer-reviewed)en
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