H+ implanted channel waveguides in buried epitaxial crystalline YAG:Nd, Tm layers and infrared-to-blue upconversion characterization

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Date
2008-12-01
Authors
Szachowicz, Marta
Joubert, Marie-France
Moretti, Paul
Couchaud, Maurice
Ferrand, Bemard
Borca, Camelia
Boudrioua, Azzedine
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AIP Publishing
Published Version
10.1063/1.2976303
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Abstract
Nd, Tm:YAG codoped single crystal waveguides were studied in order to discover if the presence of Nd3+ ions favors blue luminescence at 486 nm. Innovative implantation techniques were applied to locally change Delta n and form varied H+ implanted channel structures in Nd, Tm: YAG buried epitaxial waveguiding layers. The guided blue luminescence due to the Tm3+ (1)G(4)-> H-3(6) transition was studied under infrared excitation at 785 nm (Tm3+ absorption) and 808 nm (Nd3+ absorption) for the epitaxial planar waveguides of different Tm3+ and Nd3+ concentrations for all the implanted channel waveguide structures.
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Keywords
Ion-implantation , Proton implantation , Energy-levels , Lasers , Luminescence , Fabrication , Epitaxy , Channel waveguides , Ion implantation , Planar waveguides , Nd:YAG lasers
Citation
Szachowicz, M., Joubert, M.-F., Moretti, P., Couchaud, M., Ferrand, B., Borca, C. and Boudrioua, A. (2008) 'H+ implanted channel waveguides in buried epitaxial crystalline YAG:Nd,Tm layers and infrared-to-blue upconversion characterization', Journal of Applied Physics, 104(11), pp. 113104. doi: 10.1063/1.2976303
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http://aip.scitation.org/doi/abs/10.1063/1.2976303
URI
https://hdl.handle.net/10468/4219
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Tyndall National Institute - Journal Articles
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© 2008 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Szachowicz, M., Joubert, M.-F., Moretti, P., Couchaud, M., Ferrand, B., Borca, C. and Boudrioua, A. (2008) 'H+ implanted channel waveguides in buried epitaxial crystalline YAG:Nd,Tm layers and infrared-to-blue upconversion characterization', Journal of Applied Physics, 104(11), pp. 113104. doi: 10.1063/1.2976303 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2976303