Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

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dc.contributor.authorCharash, Ragh
dc.contributor.authorMaaskant, Pleun P.
dc.contributor.authorLewis, Liam
dc.contributor.authorMcAleese, C.
dc.contributor.authorKappers, M. J.
dc.contributor.authorHumphreys, C. J.
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderEnterprise Ireland
dc.date.accessioned2017-07-28T11:22:10Z
dc.date.available2017-07-28T11:22:10Z
dc.date.issued2009
dc.description.abstractCarrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well. (C) 2009 American Institute of Physics. (doi:10.1063/1.3244203)en
dc.description.sponsorshipEnterprise Ireland (Grant No. CFTD 06-304)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid151103
dc.identifier.citationCharash, R., Maaskant, P. P., Lewis, L., McAleese, C., Kappers, M. J., Humphreys, C. J. and Corbett, B. (2009) 'Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes', Applied Physics Letters, 95(15), pp. 151103. doi: 10.1063/1.3244203en
dc.identifier.doi10.1063/1.3244203
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued15
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4352
dc.identifier.volume95
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3244203
dc.rights© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Charash, R., Maaskant, P. P., Lewis, L., McAleese, C., Kappers, M. J., Humphreys, C. J. and Corbett, B. (2009) 'Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes', Applied Physics Letters, 95(15), pp. 151103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3244203en
dc.subjectQuantum wellsen
dc.subjectLight emitting diodesen
dc.subjectElectronsen
dc.subjectQuantum transporten
dc.subjectElectroluminescenceen
dc.titleCarrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodesen
dc.typeArticle (peer-reviewed)en
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