Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

Simple item page
dc.contributor.authorChou, Hsing-Yi
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorHurley, Paul K.
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, M.
dc.contributor.authorStesmans, A.
dc.contributor.authorYe, P. D.
dc.contributor.authorNewcomb, Simon B.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T10:48:29Z
dc.date.available2017-07-28T10:48:29Z
dc.date.issued2012
dc.description.abstractInternal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3698461)en
dc.description.sponsorshipScience Foundation Ireland (strategic research cluster FORME (07/SRC/I1172))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid141602
dc.identifier.citationChou, H. Y., O’Connor, E., Hurley, P. K., Afanas’ev, V. V., Houssa, M., Stesmans, A., Ye, P. D. and Newcomb, S. B. (2012) 'Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3', Applied Physics Letters, 100(14), pp. 141602. doi: 10.1063/1.3698461en
dc.identifier.doi10.1063/1.3698461
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued14
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4301
dc.identifier.volume100
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3698461
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chou, H. Y., O’Connor, E., Hurley, P. K., Afanas’ev, V. V., Houssa, M., Stesmans, A., Ye, P. D. and Newcomb, S. B. (2012) 'Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3', Applied Physics Letters, 100(14), pp. 141602 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3698461en
dc.subjectWork functionen
dc.subjectSurfacesen
dc.subjectIII-V semiconductorsen
dc.subjectOzoneen
dc.subjectSurface treatmentsen
dc.subjectOxide surfacesen
dc.subjectSurface photoemissionen
dc.titleInterface barriers at the interfaces of polar GaAs(111) faces with Al2O3en
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3276.pdf
Size:
739.32 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles