Inherent control of growth, morphology and defect formation in germanium nanowires

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dc.contributor.authorBiswas, Subhajit
dc.contributor.authorSingha, Achintya
dc.contributor.authorMorris, Michael A.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2018-09-12T11:03:58Z
dc.date.available2018-09-12T11:03:58Z
dc.date.issued2012-10-15
dc.date.updated2018-08-06T14:16:08Z
dc.description.abstractThe use of bimetallic alloy seeds for growing one-dimensional nanostructures has recently gained momentum among researchers. The compositional flexibility of alloys provides the opportunity to manipulate the chemical environment, reaction kinetics, and thermodynamic behavior of nanowire growth, in both the eutectic and the subeutectic regimes. This Letter describes for the first time the role of AuxAg1–x alloy nanoparticles in defining the growth characteristics and crystal quality of solid-seeded Ge nanowires via a supercritical fluid growth process. The enhanced diffusivity of Ge in the alloy seeds, compared to pure Ag seeds, and slow interparticle diffusion of the alloy nanoparticles allows the realization of high-aspect ratio nanowires with diameters below 10 nm, via a seeded bottom-up approach. Also detailed is the influence the alloyed seeds have on the crystalline features of nanowires synthesized from them, that is, planar defects. The distinctive stacking fault energies, formation enthalpies, and diffusion chemistries of the nanocrystals result in different magnitudes of {111} stacking faults in the seed particles and the subsequent growth of ⟨112⟩-oriented nanowires with radial twins through a defect transfer mechanism, with the highest number twinned Ge nanowires obtained using Ag0.75Au0.25 growth seeds. Employing alloy nanocrystals for intrinsically dictating the growth behavior and crystallinity of nanowires could open up the possibility of engineering nanowires with tunable structural and physical properties.en
dc.description.sponsorshipHigher Education Authority (HEA Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBiswas, S., Singha, A., Morris, M. A. and Holmes, J. D. (2012) 'Inherent Control of Growth, Morphology, and Defect Formation in Germanium Nanowires', Nano Letters, 12(11), pp. 5654-5663. doi: 10.1021/nl302800uen
dc.identifier.doi10.1021/nl302800u
dc.identifier.endpage5663en
dc.identifier.issn1530-6984
dc.identifier.journaltitleNanolettersen
dc.identifier.startpage5654en
dc.identifier.urihttps://hdl.handle.net/10468/6757
dc.identifier.volume12en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2602/IE/Novel Nanowire Structures for Devices/en
dc.relation.urihttps://pubs.acs.org/doi/abs/10.1021/nl302800u
dc.rights© 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/nl302800uen
dc.subjectAgxAu1−x alloyen
dc.subjectElectron microscopyen
dc.subjectGermaniumen
dc.subjectNanowireen
dc.subjectSupercritical fluid−solid−solid (SFSS) growthen
dc.subjectTwinen
dc.titleInherent control of growth, morphology and defect formation in germanium nanowiresen
dc.typeArticle (peer-reviewed)en
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