Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

dc.contributor.authorGreen, Richard P.
dc.contributor.authorMcKendry, Jonathan J. D.
dc.contributor.authorMassoubre, David
dc.contributor.authorGu, Erdan
dc.contributor.authorDawson, Martin D.
dc.contributor.authorKelly, A. E.
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.date.accessioned2017-07-28T09:23:23Z
dc.date.available2017-07-28T09:23:23Z
dc.date.issued2013
dc.description.abstractWe report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1 +/- 0.3) x 10(-29) cm(6) s(-1) at 450 nm and (3 +/- 1) x 10(-30) cm(6) s(-1) at 520 nm. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4794078)en
dc.description.sponsorshipEngineering and Physical Sciences Research Council (EPSRC "HYPIX" program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid91103
dc.identifier.citationGreen, R. P., McKendry, J. J. D., Massoubre, D., Gu, E., Dawson, M. D. and Kelly, A. E. (2013) 'Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes', Applied Physics Letters, 102(9), pp. 091103. doi: 10.1063/1.4794078en
dc.identifier.doi10.1063/1.4794078
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued9
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4286
dc.identifier.volume102
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4794078
dc.rights© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in TGreen, R. P., McKendry, J. J. D., Massoubre, D., Gu, E., Dawson, M. D. and Kelly, A. E. (2013) 'Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes', Applied Physics Letters, 102(9), pp. 091103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4794078en
dc.subjectSurfaceen
dc.subjectLasersen
dc.subjectOutputen
dc.subjectNmen
dc.subjectCarrier densityen
dc.subjectQuantum wellsen
dc.subjectLight emitting diodesen
dc.subjectIII-V semiconductorsen
dc.subjectCarrier lifetimesen
dc.titleModulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodesen
dc.typeArticle (peer-reviewed)en
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