Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system

dc.contributor.authorGeaney, Hugh
dc.contributor.authorDickinson, Calum
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorMullane, Emma
dc.contributor.authorSingh, Ajay
dc.contributor.authorRyan, Kevin M.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.date.accessioned2018-06-12T14:16:30Z
dc.date.available2018-06-12T14:16:30Z
dc.date.issued2012-10-29
dc.date.updated2018-06-11T21:39:56Z
dc.description.abstractHere, we report the formation of high density arrays of Cu15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.en
dc.description.sponsorshipHigher Education Authority (INSPIRE programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007−2013); Irish Research Council for Science, Engineering and Technology (IRCSET embark initiative)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGeaney, H., Dickinson, C., O’Dwyer, C., Mullane, E., Singh, A. and Ryan, K. M. (2012) 'Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System', Chemistry of Materials, 24(22), pp. 4319-4325. doi: 10.1021/cm302066nen
dc.identifier.doi10.1021/cm302066n
dc.identifier.endpage4325en
dc.identifier.issn0897-4756
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage4319en
dc.identifier.urihttps://hdl.handle.net/10468/6283
dc.identifier.volume24en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/06/IN.1/I85/IE/Electric Field Assisted Assembly of Semiconductor Nanorod Superlattices On-Chip/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/11/PI/1148/IE/Growth, Oriented Attachment and Large scale Vertical Assembly of Ternary and Quaternary Semiconductor Nanorods for Low Cost Photovoltaics/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/B1160/IE/SRC SEC: Advanced Biomimetic Materials for Solar Energy Conversion/en
dc.relation.urihttps://pubs.acs.org/doi/abs/10.1021/cm302066n
dc.rights© 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm302066nen
dc.subjectCopperen
dc.subjectHigh boiling point solvent synthesisen
dc.subjectSilicide nanowiresen
dc.subjectX-ray photoelectron spectroscopyen
dc.titleGrowth of crystalline copper silicide nanowires in high yield within a high boiling point solvent systemen
dc.typeArticle (peer-reviewed)en
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