Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system
dc.contributor.author | Geaney, Hugh | |
dc.contributor.author | Dickinson, Calum | |
dc.contributor.author | O'Dwyer, Colm | |
dc.contributor.author | Mullane, Emma | |
dc.contributor.author | Singh, Ajay | |
dc.contributor.author | Ryan, Kevin M. | |
dc.contributor.funder | Science Foundation Ireland | en |
dc.contributor.funder | Higher Education Authority | en |
dc.contributor.funder | Irish Research Council for Science, Engineering and Technology | en |
dc.date.accessioned | 2018-06-12T14:16:30Z | |
dc.date.available | 2018-06-12T14:16:30Z | |
dc.date.issued | 2012-10-29 | |
dc.date.updated | 2018-06-11T21:39:56Z | |
dc.description.abstract | Here, we report the formation of high density arrays of Cu15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities. | en |
dc.description.sponsorship | Higher Education Authority (INSPIRE programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007−2013); Irish Research Council for Science, Engineering and Technology (IRCSET embark initiative) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Geaney, H., Dickinson, C., O’Dwyer, C., Mullane, E., Singh, A. and Ryan, K. M. (2012) 'Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System', Chemistry of Materials, 24(22), pp. 4319-4325. doi: 10.1021/cm302066n | en |
dc.identifier.doi | 10.1021/cm302066n | |
dc.identifier.endpage | 4325 | en |
dc.identifier.issn | 0897-4756 | |
dc.identifier.journaltitle | Chemistry of Materials | en |
dc.identifier.startpage | 4319 | en |
dc.identifier.uri | https://hdl.handle.net/10468/6283 | |
dc.identifier.volume | 24 | en |
dc.language.iso | en | en |
dc.publisher | American Chemical Society (ACS) | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/06/IN.1/I85/IE/Electric Field Assisted Assembly of Semiconductor Nanorod Superlattices On-Chip/ | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/11/PI/1148/IE/Growth, Oriented Attachment and Large scale Vertical Assembly of Ternary and Quaternary Semiconductor Nanorods for Low Cost Photovoltaics/ | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/B1160/IE/SRC SEC: Advanced Biomimetic Materials for Solar Energy Conversion/ | en |
dc.relation.uri | https://pubs.acs.org/doi/abs/10.1021/cm302066n | |
dc.rights | © 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm302066n | en |
dc.subject | Copper | en |
dc.subject | High boiling point solvent synthesis | en |
dc.subject | Silicide nanowires | en |
dc.subject | X-ray photoelectron spectroscopy | en |
dc.title | Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system | en |
dc.type | Article (peer-reviewed) | en |