Electron scattering mechanisms in fluorine-doped SnO2 thin films

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dc.contributor.authorRey, G.
dc.contributor.authorTernon, C.
dc.contributor.authorModreanu, Mircea
dc.contributor.authorMescot, X.
dc.contributor.authorConsonni, V.
dc.contributor.authorBellet, D.
dc.contributor.funderAgence Nationale de la Recherche
dc.contributor.funderAssociation Instituts Carnot
dc.date.accessioned2017-09-20T10:06:32Z
dc.date.available2017-09-20T10:06:32Z
dc.date.issued2013
dc.description.abstractPolycrystalline fluorine-doped SnO2 (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 center dot 10(-4)Omega cm (square sheet resistance of 8 Omega/square) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained. (c) 2013 AIP Publishing LLC.en
dc.description.sponsorshipAgence Nationale de la Recherche [under the project "ASYSCOL") [ANR-08-HABISOL-002]; Association Instituts Carnot [ET Nano [10B792020A]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid183713
dc.identifier.citationRey, G., Ternon, C., Modreanu, M., Mescot, X., Consonni, V. and Bellet, D. (2013) 'Electron scattering mechanisms in fluorine-doped SnO2 thin films', Journal of Applied Physics, 114(18), 183713 (9pp). doi: 10.1063/1.4829672en
dc.identifier.doi10.1063/1.4829672
dc.identifier.endpage9
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued18
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4720
dc.identifier.volume114
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4829672
dc.rights© 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Rey, G., Ternon, C., Modreanu, M., Mescot, X., Consonni, V. and Bellet, D. (2013) 'Electron scattering mechanisms in fluorine-doped SnO2 thin films', Journal of Applied Physics, 114(18), 183713 (9pp). doi: 10.1063/1.4829672 and may be found at http://aip.scitation.org/doi/10.1063/1.4829672en
dc.subjectElectron scatteringen
dc.subjectCarrier mobilityen
dc.subjectElectron mobilityen
dc.subjectGrain boundariesen
dc.subjectDopingen
dc.titleElectron scattering mechanisms in fluorine-doped SnO2 thin filmsen
dc.typeArticle (peer-reviewed)en
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