Solvent vapor annealing of block copolymers in confined topographies: commensurability considerations for nanolithography

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dc.contributor.authorCummins, Cian
dc.contributor.authorKelly, Róisín A.
dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMorris, Michael A.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-09-14T13:50:53Z
dc.date.available2018-09-14T13:50:53Z
dc.date.issued2015-02-19
dc.date.updated2018-08-08T10:18:48Z
dc.description.abstractThe directed self-assembly of block copolymer (BCP) materials in topographically patterned substrates (i.e., graphoepitaxy) is a potential methodology for the continued scaling of nanoelectronic device technologies. In this Communication, an unusual feature size variation in BCP nanodomains under confi nement with graphoepitaxially aligned cylinder-forming poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP) BCP is reported. Graphoepitaxy of PS- b -P4VP BCP line patterns (C II ) is accomplished via topography in hydrogen silsequioxane (HSQ) modified substrates and solvent vapor annealing (SVA). Interestingly, reduced domain sizes in features close to the HSQ guiding features are observed. The feature size reduction is evident after inclusion of alumina into the P4VP domains followed by pattern transfer to the silicon substrate. It is suggested that this nanodomain size perturbation is due to solvent swelling effects during SVA. It is proposed that using a commensurability value close to the solvent vapor annealed periodicity will alleviate this issue leading to uniform nanofins.en
dc.description.sponsorshipScience Foundation Ireland (SFI 09/IN.1/602)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCummins, C., Kelly, R. A., Gangnaik, A., Georgiev, Y. M., Petkov, N., Holmes, J. D. and Morris, M. A. (2015) 'Solvent Vapor Annealing of Block Copolymers in Confined Topographies: Commensurability Considerations for Nanolithography', Macromolecular Rapid Communications, 36(8), pp. 762-767. doi: 10.1002/marc.201400722en
dc.identifier.doi10.1002/marc.201400722
dc.identifier.endpage767en
dc.identifier.issn1022-1336
dc.identifier.issued8en
dc.identifier.journaltitleMacromolecular Rapid Communicationsen
dc.identifier.startpage762en
dc.identifier.urihttps://hdl.handle.net/10468/6791
dc.identifier.volume36en
dc.language.isoenen
dc.publisherWiley
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Centre for Science Engineering and Technology (CSET)/02/CE.1/I142/IE/CSET CRANN: Centre for Research on Adaptive Nanostructures and Nanodevices/en
dc.relation.urihttps://onlinelibrary.wiley.com/doi/abs/10.1002/marc.201400722
dc.rights© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: (2015), Solvent Vapor Annealing of Block Copolymers in Confined Topographies: Commensurability Considerations for Nanolithography. Macromol. Rapid Commun., 36: 762-767, which has been published in final form at https://doi.org/10.1002/marc.201400722. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.en
dc.subjectBlock copolymersen
dc.subjectCommensurabilityen
dc.subjectDirected self‐assemblyen
dc.subjectGraphoepitaxyen
dc.subjectPattern transferen
dc.subjectSolvent vapor annealingen
dc.titleSolvent vapor annealing of block copolymers in confined topographies: commensurability considerations for nanolithographyen
dc.typeArticle (peer-reviewed)en
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