Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure

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dc.contributor.authorAndreev, A. D.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T13:29:54Z
dc.date.available2017-07-28T13:29:54Z
dc.date.issued2004
dc.description.abstractWe present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well structure designed for 1.3 mum laser emission. The calculations are based on a 10x10 k.p model, incorporating valence, conduction, and nitrogen-induced bands. The Auger transition matrix elements are calculated explicitly, without introducing any further approximations into the Hamiltonian used. We consider two main Auger recombination channels: the process when the energy released from the electron-hole recombination causes electron excitation (CHCC process) and the process with hole excitation to the split-off valence band (CHHS process). The CHHS process is shown to be dominant. Good agreement is found when comparing the calculated Auger rates with experimental values of the Auger contribution to the threshold current of GaInNAs quantum well lasers. (C) 2004 American Institute of Physics. (DOI: 10.1063/1.1664033)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAndreev, A. D. and O’Reilly, E. P. (2004) 'Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure', Applied Physics Letters, 84(11), pp. 1826-1828. doi: 10.1063/1.1664033en
dc.identifier.doi10.1063/1.1664033
dc.identifier.endpage1828
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued11
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1826
dc.identifier.urihttps://hdl.handle.net/10468/4399
dc.identifier.volume84
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1664033
dc.rights© 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Andreev, A. D. and O’Reilly, E. P. (2004) 'Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure', Applied Physics Letters, 84(11), pp. 1826-1828 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1664033en
dc.subjectTemperature-dependenceen
dc.subjectThreshold currenten
dc.subjectSuperlatticesen
dc.subjectOptimizationen
dc.subjectPerformanceen
dc.subjectPressureen
dc.subjectLaser theoryen
dc.subjectQuantum well lasersen
dc.subjectBand modelsen
dc.subjectValence bandsen
dc.subjectQuantum wellsen
dc.titleTheoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structureen
dc.typeArticle (peer-reviewed)en
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