Access to this article is restricted until 12 months after publication by request of the publisher. Restriction lift date: 2021-03-03
Ultraviolet stimulated emission in AlGaN layers grown on sapphire substrates using ammonia and plasma-assisted molecular beam epitaxy
| dc.check.date | 2021-03-03 | |
| dc.check.info | Access to this article is restricted until 12 months after publication by request of the publisher | en |
| dc.contributor.author | Rzheutski, Mikalai V. | |
| dc.contributor.author | Lutsenko, Evgenii V. | |
| dc.contributor.author | Vainilovich, Aliaksei G. | |
| dc.contributor.author | Svitsiankou, Illia E. | |
| dc.contributor.author | Nahorny, Aliaksei V. | |
| dc.contributor.author | Yablonskii, Gennadii P. | |
| dc.contributor.author | Zubialevich, Vitaly Z. | |
| dc.contributor.author | Petrov, Stanislav I. | |
| dc.contributor.author | Alexeev, Alexey N. | |
| dc.contributor.author | Nechaev, Dmitrii V. | |
| dc.contributor.author | Jmerik, Valentin N. | |
| dc.contributor.funder | Russian Science Foundation | en |
| dc.contributor.funder | National Academy of Sciences of Belarus | en |
| dc.date.accessioned | 2020-03-10T16:39:03Z | |
| dc.date.available | 2020-03-10T16:39:03Z | |
| dc.date.issued | 2020-03-03 | |
| dc.date.updated | 2020-03-10T16:25:39Z | |
| dc.description.abstract | Ammonia and plasma‐assisted (PA) molecular beam epitaxy modes are used to grow AlN and AlGaN epitaxial layers on sapphire substrates. It is determined that the increase of thickness of AlN buffer layer grown by ammonia‐MBE from 0.32 μm to 1.25 μm results in the narrowing of 101 X‐Ray rocking curves whereas no clear effect on 002 X‐Ray rocking curve width is observed. It is shown that strong GaN decomposition during growth by ammonia‐MBE causes AlGaN surface roughening and compositional inhomogeneity, which leads to deterioration of its lasing properties. AlGaN layers grown by ammonia‐MBE at optimized temperature demonstrate stimulated emission (SE) peaked at λ = 330 nm, 323 nm, 303 nm and 297 nm with the SE threshold values of 0.7 MW cm−2, 1.1 MW cm−2, 1.4 MW cm−2 and 1.4 MW cm−2, respectively. In comparison to these, AlGaN layer grown using PA‐MBE pulsed modes (migration‐enhanced epitaxy, metal‐modulated epitaxy, and droplet elimination by thermal annealing) shows a SE with a relatively low threshold (0.8 MW cm−2) at the considerably shorter wavelength of λ = 267 nm. | en |
| dc.description.sponsorship | National Academy of Sciences of Belarus (State Programs of Scientific Research of Belarus “Photonics, opto- and microelectronics” 2.1.01; 2.1.04); Russian Science Foundation (Grant #19-72-30040) | en |
| dc.description.status | Peer reviewed | en |
| dc.description.version | Accepted Version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Rzheutski, M. V., Lutsenko, E. V., Vainilovich, A. G., Svitsiankou, I. E., Nahorny, A. V., Yablonskii, G. P., Zubialevich, V. Z., Petrov, S. I., Alexeev, A. N., Nechaev, D. V. and Jmerik, V. N. 'Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma-Assisted Molecular Beam Epitaxy', Physica Status Solidi (A), doi: 10.1002/pssa.201900927 | en |
| dc.identifier.doi | 10.1002/pssa.201900927 | en |
| dc.identifier.endpage | 16 | en |
| dc.identifier.issn | 1862-6300 | |
| dc.identifier.journaltitle | Physica Status Solidi (A) | en |
| dc.identifier.startpage | 1 | en |
| dc.identifier.uri | https://hdl.handle.net/10468/9745 | |
| dc.language.iso | en | en |
| dc.publisher | Wiley | en |
| dc.relation.uri | https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201900927 | |
| dc.rights | © 2020. This article is protected by copyright. All rights reserved. This is the peer reviewed version of the following article: Rzheutski, M.V., Lutsenko, E.V., Vainilovich, A.G., Svitsiankou, I.E., Nahorny, A.V., Yablonskii, G.P., Zubialevich, V.Z., Petrov, S.I., Alexeev, A.N., Nechaev, D.V. and Jmerik, V.N. (2020), Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy. Phys. Status Solidi A. Accepted Author Manuscript, which will be published in final form at https://doi.org/10.1002/pssa.201900927. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving | en |
| dc.subject | AlGaN | en |
| dc.subject | AlN | en |
| dc.subject | Molecular beam epitaxy | en |
| dc.subject | Stimulated emission | en |
| dc.subject | Structural properties | en |
| dc.title | Ultraviolet stimulated emission in AlGaN layers grown on sapphire substrates using ammonia and plasma-assisted molecular beam epitaxy | en |
| dc.type | Article (peer-reviewed) | en |
